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1S20-AP PDF预览

1S20-AP

更新时间: 2024-11-05 21:20:27
品牌 Logo 应用领域
美微科 - MCC 瞄准线二极管
页数 文件大小 规格书
4页 419K
描述
Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, R-1, 2 PIN

1S20-AP 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:ROHS COMPLIANT, PLASTIC, R-1, 2 PIN针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.69
其他特性:LOW POWER LOSS外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:O-PALF-W2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:20 V表面贴装:NO
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1S20-AP 数据手册

 浏览型号1S20-AP的Datasheet PDF文件第2页浏览型号1S20-AP的Datasheet PDF文件第3页浏览型号1S20-AP的Datasheet PDF文件第4页 
M C C  
1S20  
THRU  
1SA0  
TM  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Micro Commercial Components  
Features  
·
·
Epoxy meets UL 94 V-0 flammability rating  
1.0 Amp Schottky  
Barrier Rectifier  
20 to 100 Volts  
Moisture Sensitivity Level 1  
Low power loss, high efficiency  
High current capability, Low forward voltage drop  
High surge capability  
·
Marking : Cathode band and type number  
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Maximum Ratings  
R-1  
·
·
·
Operating Temperature: -55°C to +125°C  
Storage Temperature: -55°C to +125°C  
Maximum Thermal Resistance: 50oC/W Junction to Lead  
Maximum  
Maximum  
RMS  
Voltage  
Maximum DC  
MCC  
Recurrent  
Peak Reverse  
Voltage  
D
Blocking  
Voltage  
Part Number  
1S20  
1S30  
1S40  
1S50  
1S60  
1S80  
1SA0  
20V  
14V  
21V  
28V  
35V  
42V  
56V  
70V  
20V  
30V  
40V  
50V  
60V  
80V  
100V  
30V  
40V  
50V  
60V  
80V  
100V  
A
Cathode Mark  
B
Electrical Characteristics @ 25°C Unless Otherwise Specified  
D
Average Forward  
IF(AV)  
1.0 A  
T = 75°C  
C
Current  
Peak Forward Surge  
Current  
IFSM  
35A  
8.3ms, half sine  
Maximum  
Instantaneous  
Forward Voltage  
1S20-1S40  
1S50-1S60  
1S80-1SA0  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
Typical Junction  
Capacitance  
C
I
FM = 1.0A;  
VF  
0.55V  
0.70V  
0.85V  
T = 25°C  
C
DIMENSIONS  
INCHES  
MM  
DIM  
NOTE  
MIN  
MAX  
0.140  
0.102  
0.024  
-----  
MIN  
2.90  
2.30  
0.50  
20.00  
MAX  
3.50  
2.60  
0.60  
-----  
A
B
C
D
0.116  
0.091  
0.020  
0.787  
IR  
0.5mA  
10mA  
T = 25°C  
T = 100°C  
C
C
Measured at  
1.0MHz, VR=4.0V  
CJ  
110pF  
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.  
www.mccsemi.com  
Revision: A  
2011/01/01  
1 of 4  

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