Datasheet > 1S20-1S100

1S20-1S100

更新时间： 2024-09-25 01:24:31

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海德 - HDSEMI		/
页数	文件大小	规格书
4页	1410K
描述
R-1 Plastic-Encapsulate Diodes

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中文翻译

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数据手册

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1S20-1S100 数据手册

1S20 THRU 1S100

R-1 Plastic-Encapsulate Diodes

Schottky Rectifier

Features

●I

R-1

●VRRM

20V-100V

●High surge current capability

●

Polarity: Color band denotes cathode

Applications

●Rectifier

Marking

1SXX

●

XX:From 20 to 100

Item

Symbol

Unit

Conditions

20 30 40 50 60 80 100

Repetitive Peak Reverse Voltage

V_RRM

20 30

14 21

40 50

28 35

80 100

56 70

MaximumRMS Voltage

RMS

60Hz Half-sine wave, Resistance

load,

I_F(AV)

Average Forward Current

1.0

Surge(Non-repetitive)Forward

Current

60Hz Half-sine wave,1 cycle,

Ta=25℃

I_FSM

T_J

℃

-55~+125

Junction Temperature

Storage Temperature

T_STG

-55 ~ +150

Electrical Characteristics (T =25℃ Unless otherwise specified）

Item

Symbol Unit

Test Condition

80 100

Peak Forward

Voltage

V_FM

I_FM=1.0A

0.55

0.7

0.85

I_RRM1

I_RRM2

T =25℃

0.1

Peak Reverse

Current

V_RM=V_RRM

T =125℃

Thermal

Resistance(Typical)

R_θ

℃/W

Between junction and ambient

J-A

igh Diode Semiconductor

12 3 4

中文翻译

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