Datasheet > 1S133M

1S133M

更新时间： 2024-09-24 12:56:07

品牌	Logo	应用领域
TSC		二极管开关
页数	文件大小	规格书
2页	96K
描述
300mW Hermetically Sealed Glass Switching Diode

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1S133M 数据手册

1SS133M

300mW Hermetically Sealed Glass

Switching Diode

RoHS

COMPLIANCE

DO-34

Features

Fast switching device(T_RR<4.0nS)

DO-34 package (JEDEC DO-204)

Through-hole device type mounting

Hermetically sealed glass

Compression bonded construction

All external surfaces are corrosion resistant

and leads are readily solderable

RoHS compliant

Solder hot dip Tin (Sn) lead finish

Cathode indicated by polarity band

Dimensions in inches and (millimeters)

Maximum Ratings and Electrical Characteristics

Rating at 25^oC ambient temperature unless otherwise specified.

Maximum Ratings

Type Number

Power Dissipation

Symbol

Value

300

150

450

Units

Working Inverse Voltage

W_IV

IFM

I_FSURGE

T_J

Average Rectified Current

Non-Repetitive Peak Forward Current

Peak Forward surge Current

Operating Junction Temperature

Storage Temperature Range

+ 175

-65 to + 200

^OC

T_STG

^OC

Electrical Characteristics

Type Number

Symbol

Min

Max

Units

Breakdown Voltage

I_R=500nA

I_F=100mA

V_R=80V

B_V

trr

Forward Voltage

1.2

500

4.0

Reverse Leakage Current

Junction Capacitance V_R=0, f=1.0MHz

Reverse Recovery Time (Note 1)

Notes: 1. Reverse Recovery Test Conditions: I_F=I_R=10mA, R_L=100Ω, I_RR=1mA

Version: A07

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