Datasheet > 1PT06E-08

1PT06E-08

更新时间： 2024-11-23 12:20:51

品牌	Logo	应用领域
尼尔 - NELLSEMI		可控硅栅
页数	文件大小	规格书
4页	189K
描述
Sensitive gate SCRs, 1A

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数据手册

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1PT06E-08 数据手册

RoHS

1PT Series

SEMICONDUCTOR

Sensitive gate SCRs, 1A

Main Features

Symbol

Value

Unit

I_T(RMS)

V_DRM/V_RRM

I_GT

600 to 800

40 to 200

µA

DESCRIPTION

Thanks to highly sensitive triggering levels, the 1PT

series is suitable for all applications where the available

gate current is limited, such as capacitive discharge

TO-92

ignitions, motor control in kitchen aids, overvoltage

crowbar protection in low power supplies among others.

(1PTxxE)

(A2)

Available in through-hole or surface-mount packages,

they provide an optimized performance in a limited

space area.

(G)3

1(A1)

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUE

UNIT

RMS on-state current full sine wave

(180° conduction angle )

I_T(RMS)

T_c=85ºC

Average on-state current

(180° conduction angle)

I_T(AV)

0.6

F =50 Hz

F =60 Hz

t = 20 ms

t = 16.7 ms

t_p= 10 ms

Non repetitive surge peak on-state

I_TSM

current (full cycle, T initial = 25°C)

I²t Value for fusing

A²s

A/µs

I²t

0.72

Critical rate of rise of on-state current

I_G= 2xl_GT, t_r≤100ns

dI/dt

F = 60 Hz

T_p= 20 µs

T_j= 110ºC

I_GM

P_GM

0.5

Peak gate current

T_A=25°C, Pulse width≤0.1µs

Forward peak gate power

Average gate power dissipation

Repetitive peak off-state voltage

P_G(AV)

V_DRM

V_RRM

T_stg

T_j=110ºC

0.1

T_j=25ºC

600 and 800

Repetitive peak reverse voltage

Storage temperature range

- 40 to + 150

- 40 to + 110

ºC

T_j

Operating junction temperature range

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