Datasheet > 1PS79SB70

1PS79SB70

更新时间： 2024-09-16 12:53:35

品牌	Logo	应用领域
TYSEMI		二极管光电二极管
页数	文件大小	规格书
1页	56K
描述
Low forward voltage High breakdown voltage High breakdown voltage

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1PS79SB70 数据手册

Product specification

1PS79SB70

SOD-523

Unit: mm

0.6

+0.1

-0.1

+0.1

-0.1

1.2

Features

Low forward voltage

High breakdown voltage

Guard ring protected

Ultra small plastic SMD package.

Low capacitance.

+0.1

-0.1

1.6

0.77max

Absolute Maximum Ratings Ta = 25

Parameter

continuous reverse voltage

continuous forward current

repetitive peak forward current

non-repetitive peak forwrad current

storage temperature

Symbol

V^R

Conditions

Min

Max

Unit

I^F

I^FSM

T^stg

T^j

tp 1 s;ä 0.5

tp < 10 ms

100

+150

150

+150

-65

junction temperature

operating ambient temperature

T^amb

Electrical Characteristics Ta = 25

Param eter

Sym bol

Conditions

Max

410

750

Unit

m V

I^F= 1 m A

I^F= 10 m A

continuous forward voltage

V^F

I^F= 15 m A

I^R

V^R= 50 V, note 1

V^R= 70 V, note 1

V^R= 0 V, f = 1 MHz

100

capacitance reverse current

diods capacitance

Note

C^d

1. Pulse test: t^p= 300

s, ä = 0.02.

Marking

http://www.twtysemi.com

4008-318-123

1 of 1

sales@twtysemi.com

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