5秒后页面跳转
1PS59SB21 PDF预览

1PS59SB21

更新时间: 2024-09-21 12:32:27
品牌 Logo 应用领域
TYSEMI 二极管开关光电二极管
页数 文件大小 规格书
1页 85K
描述
Ultra fast switching speed Low forward voltage Guard ring protoected

1PS59SB21 数据手册

  
Product specification  
1PS59SB21  
SOT-23  
Unit: mm  
+0.1  
-0.1  
2.9  
0.4  
+0.1  
-0.1  
3
Features  
Ultra fast switching speed  
Low forward voltage  
Guard ring protoected  
Small SMD package.  
1
2
+0.1  
0.95  
-0.1  
+0.05  
0.1  
-0.01  
+0.1  
-0.1  
1.9  
Absolute Maximum Ratings Ta = 25  
Parameter  
Continuous reverse voltage  
Continuous forward current  
Non-repetitive peak forwrad current  
Storage temperature  
Symbol  
VR  
Min  
-65  
Max  
40  
Unit  
V
mA  
A
IF  
200  
1
IFSM  
Tstg  
Tj  
+150  
125  
Junction temperature  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Conditions  
IF = 10 mA  
Min  
Max  
300  
420  
550  
15  
Unit  
mV  
forward voltage  
reverse current  
VF  
IF = 100 mA  
IF = 200 mA  
VR = 35 V  
A
mA  
pF  
IR  
3
VR = 35 V, Tj = 100 ,note 1  
f = 1 MHz; VR = 0 V  
diode capacitance  
Cd  
40  
50  
thermal resistance from junction to ambient  
Note  
Rth j-a  
500  
K/W  
1. Pulse test: tp = 300 s; ä = 0.02.  
Marking  
Marking  
21  
http://www.twtysemi.com  
sales@twtysemi.com  
1 of 1  
4008-318-123  

与1PS59SB21相关器件

型号 品牌 获取价格 描述 数据表
1PS59SB21T/R NXP

获取价格

DIODE SILICON, SIGNAL DIODE, TO-236, Signal Diode
1PS66SB17 NXP

获取价格

4 V, 30 mA low Cd Schottky barrier diode
1PS66SB17 NEXPERIA

获取价格

4 V, 30 mA low capacitance Schottky barrier diodeProduction
1PS66SB17,115 NXP

获取价格

1PS66SB17 - 4 V, 30 mA low capacitance Schottky barrier diode SOT 6-Pin
1PS66SB62 PHILIPS

获取价格

Diode,
1PS66SB62,115 NXP

获取价格

1PS66SB62
1PS66SB63 NXP

获取价格

5 V, 20 mA low Cd Schottky barrier diodes
1PS66SB82 NXP

获取价格

15 V, 30 mA low Cd Schottky barrier diodes
1PS66SB82 NEXPERIA

获取价格

15 V, 30 mA low Cd Schottky barrier diodesProduction
1PS66SB82,115 NXP

获取价格

1PS66SB82; 1PS88SB82 - 15 V, 30 mA low Cd Schottky barrier diodes SOT 6-Pin