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1N971B PDF预览

1N971B

更新时间: 2024-11-11 22:37:47
品牌 Logo 应用领域
威世 - VISHAY 二极管齐纳二极管测试
页数 文件大小 规格书
2页 41K
描述
ZENER DIODES

1N971B 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:O-GALF-W2Reach Compliance Code:compliant
风险等级:5.78配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
最大动态阻抗:41 Ω最大正向电压 (VF):1.5 V
JEDEC-95代码:DO-204AHJESD-30 代码:O-GALF-W2
JESD-609代码:e2膝阻抗最大值:700 Ω
元件数量:1端子数量:2
最高工作温度:175 °C封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
极性:UNIDIRECTIONAL最大功率耗散:0.5 W
标称参考电压:27 V最大反向电流:5 µA
反向测试电压:20.6 V子类别:Voltage Reference Diodes
表面贴装:NO技术:ZENER
端子面层:Tin/Silver (Sn/Ag)端子形式:WIRE
端子位置:AXIAL最大电压容差:5%
工作测试电流:4.6 mABase Number Matches:1

1N971B 数据手册

 浏览型号1N971B的Datasheet PDF文件第2页 
NEW PRODUCT  
NEW PRODUCT  
NEW PRODUCT  
1N957 THRU 1N978  
ZENER DIODES  
FEATURES  
DO-35  
Silicon Planar Power Zener Diodes  
Standard Zener voltage tolerance is ±5% for  
“B” suffix. Other tolerances are available upon  
request.  
max.  
.079 (2.0)  
Cathode  
Mark  
max. .020 (0.52)  
MECHANICAL DATA  
Case: DO-35 Glass Case  
Weight: approx. 0.13 g  
Dimensions are in inches and (millimeters)  
MAXIMUM RATINGS  
Ratings at 25°C ambient temperature unless otherwise specified.  
SYMBOL  
VALUE  
UNIT  
Zener Current (see Table “Characteristics”)  
Power Dissipation at TL = 75°C  
Junction Temperature  
Ptot  
Tj  
500(1)  
175  
mW  
°C  
Storage Temperature Range  
TS  
– 65 to +175  
°C  
NOTES:  
(1) TL is measured 3/8” from body.  
SYMBOL  
MIN.  
TYP.  
MAX.  
UNIT  
Thermal Resistance  
Junction to Ambient Air  
RthJA  
300(1)  
°C/W  
Forward Voltage  
at IF = 200 mA  
VF  
1.5  
Volts  
NOTES:  
(1) Valid provided that leads at a distance of 3/8” from case are kept at ambient temperature.  
1/6/98  

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