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1N916TR PDF预览

1N916TR

更新时间: 2024-01-19 09:23:08
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 二极管
页数 文件大小 规格书
6页 135K
描述
Rectifier Diode, 1 Element, 0.2A, 100V V(RRM), Silicon, DO-35, DO-35, 2 PIN

1N916TR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-35
包装说明:O-XALF-W2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.43
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJEDEC-95代码:DO-35
JESD-30 代码:O-XALF-W2JESD-609代码:e3
元件数量:1端子数量:2
最高工作温度:175 °C最大输出电流:0.2 A
封装主体材料:UNSPECIFIED封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT APPLICABLE
最大功率耗散:0.5 W认证状态:Not Qualified
最大重复峰值反向电压:100 V最大反向恢复时间:0.004 µs
子类别:Rectifier Diodes表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT APPLICABLE
Base Number Matches:1

1N916TR 数据手册

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April 2013  
1N/FDLL 914A/B / 916/A/B / 4148 / 4448  
Small Signal Diode  
Cathode Band  
LL-34 COLOR BAND MARKING  
DEVICE  
1ST BAND  
FDLL914  
BLACK  
BLACK  
BLACK  
BLACK  
BLACK  
FDLL914A  
FDLL914B  
FDLL4148  
FDLL4448  
SOD80  
LL-34  
DO-35  
THE PLACEMENT OF THE EXPANSION GAP  
HAS NO RELATIONSHIP TO THE LOCATION  
OF THE CATHODE TERMINAL  
-1st band denotes cathode terminal  
and has wider width  
Cathode is denoted with a black band  
Absolute Maximum Ratings(1)  
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-  
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-  
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The  
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.  
Symbol  
Parameter  
Maximum Repetitive Reverse Voltage  
Value  
100  
Units  
V
VRRM  
IO  
IF  
If  
Average Rectified Forward Current  
DC Forward Current  
200  
mA  
mA  
mA  
A
300  
Recurrent Peak Forward Current  
400  
Pulse Width = 1.0 s  
1.0  
IFSM  
Non-repetitive Peak Forward Surge Current  
Pulse Width = 1.0 μs  
4.0  
A
TSTG  
Storage Temperature Range  
-65 to +200  
175  
°C  
TJ  
Operating Junction Temperature  
°C  
Note:  
1. These ratings are limiting values above which the serviceability of the diode may be impaired.  
Thermal Characteristics  
Max.  
Symbol  
Parameter  
Units  
1N/FDLL 914/A/B / 4148 / 4448  
PD  
Power Dissipation  
Thermal Resistance, Junction to Ambient  
500  
300  
mW  
RθJA  
°C/W  
© 2007 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
1N/FDLL 914A/B / 916/A/B / 4148 / 4448 Rev. 1.1.1  
1

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