Datasheet > 1N914BWS

1N914BWS

更新时间： 2024-05-23 22:21:28

品牌	Logo	应用领域
德昌 - TC		/
页数	文件大小	规格书
5页	401K
描述
SOD-323

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中文翻译

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数据手册

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1N914BWS 数据手册

TAK CHEON

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SEMICONDUCTOR

200mW SOD-323 SURFACE MOUNT

Small Outline Flat Lead Plastic Package

Fast Switching Diode

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

P_D

T_STG

T_J

Power Dissipation

200

-65 to +150

+150

100

°C

Storage Temperature Range

Operating Junction Temperature

Non-Repetitive Peak Reverse Voltage

Repetitive Peak Reverse Voltage

Repetitive Peak Forward Current

Continuous Forward Current

V_RSM

V_RRM

I_FRM

I_O

300

150

Peak Forward Surge Current

(Pulse Width=1us)

I_FSM

These ratings are limiting values above which the serviceability of the diode may be impaired.

Specification Features:

Fast Switching Device (T_RR<4.0 nS)

General Purpose Diodes

RoHS Compliant

DEVICE MARKING CODE:

Device Type

1N4148WS

1N4448WS

1N914BWS

Device Marking

Green EMC

Matte Tin(Sn) Lead Finish

Band Indicates Cathode

Weight: approx. 0.004g

AEC-Q101 Qualified

Electrical Characteristics

T_A= 25°C unless otherwise noted

Limits

Max

Symbol

Parameter

Test Condition

I_R=100µA

Unit

Min

100

B_V

I_R

Breakdown Voltage

Reverse Leakage Current

Forward Voltage

Volts

I_R=5µA

V_R=20V

V_R=75V

µA

V_F

1N4448WS, 1N914BWS I_F=5mA

TC1N4448WS, 1N4148WS I_F=10mA

0.62

0.72

1.0

Volts

1N4448WS, 1N914BWS I_F=100mA

T_RR

Reverse Recovery Time

I_F=10mA

I_R=60mA

R_L=100

I_RR=1mA

Capacitance

V_R=0V, f=1M_HZ

Number: DB-009

April 2019 Release, Revision G

Page 1

12 3 4 5

中文翻译

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