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1N914BW PDF预览

1N914BW

更新时间: 2024-11-25 17:14:59
品牌 Logo 应用领域
德昌 - TC /
页数 文件大小 规格书
5页 423K
描述
SOD-123

1N914BW 数据手册

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TAK CHEON
G
®  
SEMICONDUCTOR  
400mW SOD-123 SURFACE MOUNT  
Small Outline Flat Lead Plastic Package  
General Purpose Application  
Green Product  
Fast Switching Diode  
Absolute Maximum Ratings TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
PD  
TSTG  
TJ  
Power Dissipation  
400  
-65 to +150  
+150  
100  
mW  
°C  
°C  
V
Storage Temperature Range  
SOD-123 Flat Lead  
Operating Junction Temperature  
Non-Repetitive Peak Reverse Voltage  
Repetitive Peak Reverse Voltage  
Repetitive Peak Forward Current  
Continuous Forward Current  
VRSM  
VRRM  
IFRM  
IO  
75  
V
300  
mA  
mA  
150  
Peak Forward Surge Current  
(Pulse Width=1us)  
IFSM  
2
A
These ratings are limiting values above which the serviceability of the diode may be impaired.  
Specification Features:  
DEVICE MARKING CODE:  
.
.
.
.
.
.
.
.
Fast Switching Device (TRR <4.0 nS)  
General Purpose Diodes  
RoHS Compliant  
Device Type  
Device Marking  
1N4148W  
1N4448W  
1N914BW  
D1  
D2  
D3  
Green EMC  
Matte Tin(Sn) Lead Finish  
Band Indicates Cathode  
Weight: approx. 0.01g  
AEC-Q101 Qualified  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Limits  
Max  
Symbol  
Parameter  
Test Condition  
IR=100µA  
Unit  
Min  
100  
75  
BV  
Breakdown Voltage  
Reverse Leakage Current  
Forward Voltage  
Volts  
IR=5µA  
IR  
VR=20V  
VR=75V  
IF=5mA  
IF=10mA  
25  
5
nA  
µA  
VF  
1N4448W, 1N914BW  
0.62  
0.72  
1.0  
1.0  
TC1N444  
8W, 1N4148W  
Volts  
1N4448W, 1N914BW IF=100mA  
TRR  
Reverse Recovery Time  
IF=10mA  
IR=60mA  
RL=100  
IRR=1mA  
4
4
nS  
pF  
C
Capacitance  
VR=0V, f=1MHZ  
Number: DB-022  
April 2019 Release, Revision G  
Page 1  

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