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1N826E3 PDF预览

1N826E3

更新时间: 2024-11-06 19:23:11
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
3页 317K
描述
Zener Diode, 6.55V V(Z), 5.34%, 0.5W, Silicon, DO-204AA, HERMETIC SEALED, GLASS, DO-7, 2 PIN

1N826E3 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:O-LALF-W2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.68其他特性:METALLURGICALLY BONDED
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JEDEC-95代码:DO-204AAJESD-30 代码:O-LALF-W2
JESD-609代码:e3元件数量:1
端子数量:2封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:0.5 W
标称参考电压:6.55 V表面贴装:NO
技术:ZENER端子面层:TIN
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIED电压温度Coeff-Max:0.131 mV/ °C
最大电压容差:5.34%Base Number Matches:1

1N826E3 数据手册

 浏览型号1N826E3的Datasheet PDF文件第2页浏览型号1N826E3的Datasheet PDF文件第3页 
1N821 thru 1N829A-1 DO-7  
6.2 & 6.55 Volt Temperature Compensated  
Zener Reference Diodes  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
The popular 1N821 thru 1N829 series of Zero-TC Reference Diodes  
provides a selection of both 6.2 V and 6.55 V nominal voltages and  
temperature coefficients to as low as 0.0005%/oC for minimal voltage  
change with temperature when operated at 7.5 mA. These glass axial-  
leaded DO-7 reference diodes are also available in JAN, JANTX, JANTXV,  
and JANS military qualifications. Microsemi also offers numerous other  
Zener Reference Diode products for a variety of other voltages up to 200 V.  
DO-7  
(DO-204AA)  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
JEDEC registered 1N821 thru 1N829 series  
Internal metallurgical bonds  
Double anode option with 1N822 and 1N824 selection  
Provides minimal voltage changes over a broad  
temperature range  
For instrumentation and other circuit designs  
requiring a stable voltage reference  
Reference voltage selection of 6.2 V & 6.55 V +/-5%  
Maximum temperature coefficient selections  
with further tight tolerance options at nominal of 6.35 V  
available from 0.01%/ºC to 0.0005%/ºC  
1N821, 823, 825, 827 and 829 also have military  
qualification to MIL-PRF-19500/159 up to the JANS  
level by adding JAN, JANTX, JANTXV, or JANS  
prefixes to part numbers as well as the “-1” suffix, e.g.  
JANTX1N829-1, etc.  
Radiation Hardened devices available by changing  
“1N” prefix to “RH”, e.g. RH827, RH 829, RH829A,  
etc. Also consult factory for “RH” data sheet brochure  
Military surface mount equivalents also available in  
DO-213AA with UR-1 suffix and JAN, JANTX, or  
JANTXV prefix, e.g. JANTX1N829UR-1 (see separate  
data sheet)  
Tight voltage tolerances with nominal reference  
voltages of 6.35 V available by adding tolerance  
1%, 2%, 3%, etc. after the part number for  
identification e.g. 1N827-2%, 1N829A -1%, 1N829-  
1-1%, etc.  
Flexible axial-lead mounting terminals  
Nonsensitive to ESD per MIL-STD-750 Method  
1020  
Also available in smaller axial-leaded DO-35 package  
(see separate data sheet)  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
Operating & StorageTemperature: -65oC to +175oC  
CASE: Hermetically sealed glass case with DO-7  
DC Power Dissipation: 500 mW @ TL = 25oC and  
maximum current IZM of 70 mA. NOTE: For optimum  
voltage-temperature stability, IZ = 7.5 mA (less than 50  
mW in dissipated power)  
(DO-204AA) package  
TERMINALS: Tin-lead plated and solderable per  
MIL-STD-750, Method 2026  
MARKING: Part number and cathode band (except  
Solder temperatures: 260 oC for 10 s (maximum)  
double anode 1N822 and 1N824)  
POLARITY: Reference diode to be operated with  
the banded end positive with respect to the  
opposite end  
TAPE & REEL option: Standard per EIA-296 (add  
“TR” suffix to part number)  
WEIGHT: 0.2 grams.  
See package dimensions on last page  
Copyright 2003  
Microsemi  
Page 1  
10-27-2003 REV C  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  

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