Datasheet > 1N826-1-PBF

1N826-1-PBF

更新时间： 2024-11-06 06:34:51

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描述
Zener Diode, 6.55V V(Z), 5.34%, 0.5W, Silicon, DO-7

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1N826-1-PBF 数据手册

1N821-1N829A

TEMPERATURE COMPENSATED ZENER

REFERENCE DIODE

High-reliability discrete products

and engineering services since 1977

FEATURES



Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.

MAXIMUM RATINGS

Operating and storage temperature range

-65°C to +175°C

500mW @ T_L= 25°C and maximum current l_ZMOF 70mA.

For optimum voltage-temperature stability, l_Z= 7.5mA

(less than 50 mW in dissipated power)

DC power dissipation

Solder temperatures

260°C for 10 s (max)

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Voltage temperature

stability

(ΔV_ZTMAX)

-55°C to = 100°C

(Note 3 and 4)

Maximum

reverse

current

l_R@ 3V

Effective

temperature

coefficient

α_VZ

Maximum zener

impedance

(Note 2)

Zener Test

Current

l_ZT

Part number

Zener voltage

(Note 1 and 4)

V_Z@ l_ZT

Z_ZT@ l_ZT

VOLTS

5.9-6.5

6.2-6.9

5.9-6.5

6.2-6.9

5.9-6.5

7.5

OHMS

μA

2.0

%/°C

0.01

1N821

1N821A

1N822†

1N823

0.01

0.005

0.002

0.001

0.0005

1N823A

1N824†

1N825

1N825A

1N826

1N827

1N827A

1N828

1N829

1N829A

† Double Anode; electrical specifications apply under both bias polarities.

NOTES:

Add a “-1” suffix for internal metallurgical bond.

Zener impedance measured by superimposing 0.75 mA ac rms on 7.5mA dc @ 25°C.

The maximum allowable change observed over the entire temperature range, i.e. the diode voltage will not exceed the specified mV change at

discrete temperature between the established limits.

Voltage measurements to be performed 15 seconds after application of dc current.

Rev. 20160114

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