Datasheet > 1N728WS

1N728WS

更新时间： 2023-12-06 20:06:29

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	277K
描述
肖特基二极管

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1N728WS 数据手册

1N728WS

Silicon Epitaxial Planar Schottky Barrier Diode

For super-high speed switching and

wave detection circuit applications

PINNING

DESCRIPTION

Cathode

Anode

Top View

Simplified outline SOD-323 and symbol

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_RM

V_R

Value

Unit

Peak Reverse Voltage

Reverse Voltage

℃

Forward Current

I_F

150

Peak Forward Current

Junction Temperature

Storage Temperature Range

I_FM

125

T_j

- 55 to + 125

℃

T_stg

Characteristics at T_a= 25℃

Parameter

Symbol

V_(BR)R

Min.

Typ.

Max.

Unit

Reverse Breakdown Voltage

at I_R= 100 μA

Forward Voltage

at I_F= 1 mA

at I_F= 30 mA

V_F

0.4

Reverse Current

at V_R= 30 V

I_R

C_T

t_rr

0.3

µA

Terminal Capacitance

at V_R= 1 V, f = 1 MHz

1.5

Reverse Recovery Time

at I_F= I_R= 10 mA, I_rr= 1 mA, R_L= 100 Ω

Detection Efficiency

at V_in= 3 V_(peak), f = 30 MHz, R_L= 3.9 KΩ, C_L= 10 pF

1 / 3

Dated : 29/11/2022 Rev:02

12 3

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