Datasheet > 1N7068DP

1N7068DP

更新时间： 2024-11-30 18:09:23

品牌	Logo	应用领域
SENSITRON		/
页数	文件大小	规格书
3页	247K
描述
DESCRIPTION: 210 VOLT, AMP, 30 NS HERMETIC RECTIFIER IN A PACKAGE.

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1N7068DP 数据手册

1N7068DP

HERMETIC HYPERFAST

RECOVERY RECTIFIER

SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

DATA SHEET 5554, REV -

10A, 200V HYPERFAST RECOVERY RECTIFIER

•

Ultra-fast reverse recovery: 30ns

Hermetically sealed power package

MIL-PRF-19500 screening and QCI available (see part ordering information)

ELECTRICAL CHARACTERISTICS:

All ratings are at T_A= 25^oC unless otherwise specified.

RATING

CONDITIONS

I_R= 100 µA

MIN

TYP

MAX

UNIT

Working Peak Reverse

210

Voltage (V_RWM

)

Average Rectified Output

Current (I_o)

T_C= 100⁰C

Surge Peak Forward Current t_p= 8.3 ms, Half Sine Wave,

350

(I_FSM) @ T_A=25^oC

superimposed on rated I_o

Thermal Resistance (R_θJC

Junction Temperature (T_J)

Storage Temp. (T_stg)

)

4.5

^oC/W

C

-65

+175

C

CHARACTERISTIC

CONDITIONS

MIN

TYP

MAX

0.90

0.95

1.05

0.85

0.78

1.05

UNIT

Maximum Forward Voltage (V_F1) I_F= 6.0A

(V_F2) I_F= 10.0A

(V_F3) I_F= 20.0A

(V_F4)

(V_F5)

(V_F6)

I_F= 6.0A, T_A= 125C

I_F= 6.0A, T_A= 150C

I_F= 6.0A, T_A= -55C

T_A= 25 C

Maximum Reverse

Leakage Current I_RM

@ V_RWM

(I_R1)

(I_R2)

(I_R3)

µA

100

500

T_A= 125 C

T_A= 150 C

Breakdown Voltage

Junction Capacitance

Reverse Recovery Tim

(BV_R) I_R= 100µA

210

(C_J)

V_R= 10Vdc, f = 1MHz

105

(t_RR) I_F= 1A, I_R= 1A, I_RR= 0.1A

12 3

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