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1N7066SMSS PDF预览

1N7066SMSS

更新时间: 2024-02-01 03:59:57
品牌 Logo 应用领域
SSDI 整流二极管超快速恢复二极管
页数 文件大小 规格书
2页 177K
描述
10 AMP 50 -150 VOLTS 30 ns HYPERFAST RECOVERY RECTIFIER

1N7066SMSS 技术参数

生命周期:Active包装说明:E-XALF-W2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.67Is Samacsys:N
应用:HYPER FAST RECOVERY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.78 V
JESD-30 代码:E-XALF-W2最大非重复峰值正向电流:325 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:10 A
封装主体材料:UNSPECIFIED封装形状:ELLIPTICAL
封装形式:LONG FORM认证状态:Not Qualified
最大重复峰值反向电压:50 V最大反向恢复时间:0.03 µs
子类别:Rectifier Diodes表面贴装:NO
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

1N7066SMSS 数据手册

 浏览型号1N7066SMSS的Datasheet PDF文件第2页 
PRELIMINARY  
1N7066 thru 1N7068  
and  
1N7066SMS thru 1N7068SMS  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
10 AMP  
50 150 VOLTS  
Designer’s Data Sheet  
30 ns HYPERFAST RECOVERY  
RECTIFIER  
Part Number/Ordering Information 1/  
1N70 __ __ __  
Screening 2/  
__ = Not Screened  
TX = TX Level  
TXV = TXV  
FEATURES:  
Hyper Fast Reverse Recovery: 30ns Maximum4/  
High Surge Current: 325 A Maximum  
Hermetically Sealed  
S = S Level  
Low Forward Voltage Drop .95 @10A  
Void Free Chip Construction  
Solid Silver Leads  
Package Type  
__ = Axial Leaded  
SMS = Surface Mount Square Tab  
Available in Axial & Square Tab Versions  
TX, TXV, and S-Level Screening Available 2/  
Axial Lead Higher Current Replacements for:  
1N5807, 1N5809, 1N5811  
Possible SMS Replacements for Stud Mount :  
1N5812, 1N5814, 1N5816  
Voltage/Family  
66= 50V  
67 = 100V  
68 = 150V  
MAXIMUM RATINGS 3/  
RATING  
SYMBOL VALUE  
UNIT  
Peak Repetitive Reverse  
Voltage  
1N7066  
1N7067  
1N7068  
VRRM  
VRWM  
VR  
50  
100  
150  
Volts  
And  
DC Blocking Voltage  
Average Rectified Forward Current (Axial TL 55°C; SMS TEC 100°C ) 5/  
IO  
Amps  
Amps  
10  
Peak Surge Current  
(8.3 ms pulse, half sine wave, superimposed on Io, allow  
junction to reach equilibrium between pulses, TA = 25°C)  
325  
IFSM  
TJ and  
TSTG  
-65 to +175  
Operating & Storage Temperature  
°C  
Junction to Lead for Axial, L =.125"  
Junction to End Tab for Surface Mount  
RθJL  
RθJE  
8
4.5  
Thermal Resistance  
°C/W  
NOTES:  
1/ For Ordering Information, Price, Operating Curves, and Availability- Contact Factory.  
2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request.  
3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.  
4/ IF = 1A, IR = 1A, IRR = 0.1A, TA = 25°C  
Axial Leaded  
SMS  
5/ Operating at higher Io currents may be achieved based on specific application  
and device mounting if Tj is maintained below 175ºC.  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: RC0119C  
DOC  

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