Datasheet > 1N6820E3

1N6820E3

更新时间： 2024-11-28 14:46:07

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管
页数	文件大小	规格书
2页	289K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 75A, 100V V(RRM), Silicon, HERMETIC SEALED, CERAMIC, THINKEY4, 1 PIN

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中文翻译

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技术参数
数据手册

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1N6820E3 技术参数

生命周期：	Active	包装说明：	HERMETIC SEALED, CERAMIC, THINKEY4, 1 PIN
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.72
应用：	GENERAL PURPOSE	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	RECTIFIER DIODE
JESD-30 代码：	S-CSSO-G1	最大非重复峰值正向电流：	500 A
元件数量：	1	相数：	1
端子数量：	1	最大输出电流：	75 A
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装形状：	SQUARE
封装形式：	SMALL OUTLINE	最大重复峰值反向电压：	100 V
表面贴装：	YES	技术：	SCHOTTKY
端子形式：	GULL WING	端子位置：	SINGLE
Base Number Matches：	1

1N6820E3 数据手册

2830 S. Fairview St.

Santa Ana, CA 92704

PH: (714) 979-8220

FAX: (714) 966-5256

MSASC75W100F

(1N6820)

Features

•

Tungsten/Platinum schottky barrier

Oxide passivated structure for low leakage currents

100 Volts

75 Amps

Guard ring protection for increased reverse energy capability

Epitaxial structure minimizes forward voltage drop

Hermetically sealed, low profile ceramic surface mount power package

Very low thermal resistance and low package inductance

Available as reverse polarity, strap-to-cathode: MSASC75W100FR

(1N6820R)

LOW REVERSE

LEAKAGE

•

TXV-level (MSASC75W100FV) or S-level (MSASC75W100FS)

screening i.a.w. Microsemi Internal Procedure PS11.50 available

SCHOTTKY DIODE

Maximum Ratings @ 25°C (unless otherwise specified)

DESCRIPTION

SYMBOL

MAX.

UNIT

Peak Repetitive Reverse Voltage

V_RRM

V_RWM

V_R

100

Volts

Amps

Working Peak Reverse Voltage

100

DC Blocking Voltage

100

I_F(ave)

dI_F/dT

I_FSM

Average Rectified Forward Current, Tc≤ 125°C

derating, forward current, Tc≥ 125°C

Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave

Peak Repetitive Reverse Surge Current, tp= 1µs, f= 1kHz

Junction Temperature Range

500

Amps/°C

Amps

I_RRM

T_j

Amp

-55 to +175

0.50

°C

Storage Temperature Range

Thermal Resistance, Junction to Case:

T_stg

MSASC75W100F

MSASC75W100FR

θ_JC

°C/W

0.65

Mechanical Outline

ThinKey™4

Datasheet# MSC1031B

中文翻译

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与1N6820E3相关器件

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1N6820R	MICROSEMI	获取价格	LOW REVERSE LEAKAGE SCHOTTKY DIODE
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1N6821R	MICROSEMI	获取价格	LOW VOLTAGE DROP SCHOTTKY DIODE
1N6822	MICROSEMI	获取价格	LOW LEAKAGE SCHOTTKY DIODE
1N6822R	MICROSEMI	获取价格	LOW LEAKAGE SCHOTTKY DIODE
1N6823	MICROSEMI	获取价格	LOW LEAKAGE SCHOTTKY DIODE
1N6823R	MICROSEMI	获取价格	LOW LEAKAGE SCHOTTKY DIODE
1N6824-1	SENSITRON	获取价格	SCHOTTKY FAST SWITCHING DIODES
1N6824UR-1	SENSITRON	获取价格	SCHOTTKY FAST SWITCHING DIODES
1N6836	VMI	获取价格	2,000 V - 5,000 V Rectifiers 0.5 A - 1.5 A Forward Current 30 ns - 50 ns Recovery Time