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1N6818 PDF预览

1N6818

更新时间: 2024-11-27 22:34:59
品牌 Logo 应用领域
美高森美 - MICROSEMI 肖特基二极管
页数 文件大小 规格书
2页 92K
描述
LOW VOLTAGE DROP SCHOTTKY DIODE

1N6818 数据手册

 浏览型号1N6818的Datasheet PDF文件第2页 
2830 S. Fairview St.  
Santa Ana, CA 92704  
PH: (714) 979-8220  
FAX: (714) 966-5256  
1N6818  
(MSASC75H45F)  
1N6818R  
Features  
·
·
·
·
·
·
·
·
Tungsten/Platinum schottky barrier for very low VF  
Oxide passivated structure for very low leakage currents  
Guard ring protection for increased reverse energy capability  
Epitaxial structure minimizes forward voltage drop  
(MSASC75H45FR)  
PRELIMINARY  
Hermetically sealed, low profile ceramic surface mount power package  
45 Volts  
Low package inductance  
Very low thermal resistance  
75 Amps  
Available as standard polarity (strap is anode: 1N6818) and reverse  
polarity (strap is cathode: 1N6818R)  
LOW VOLTAGE  
DROP SCHOTTKY  
Maximum Ratings @ 25°C (unless otherwise specified)  
DIODE  
DESCRIPTION  
SYMBOL  
MAX.  
UNIT  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
Average Rectified Forward Current, Tc£ 125°C  
derating, forward current, Tc³ 125°C  
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave  
Peak Repetitive Reverse Surge Current, tp= 1ms, f= 1kHz  
Junction Temperature Range  
VRRM  
VRWM  
VR  
IF(ave)  
dIF/dT  
IFSM  
IRRM  
Tj  
45  
45  
45  
75  
4
500  
2
Volts  
Volts  
Volts  
Amps  
Amps/°C  
Amps  
Amp  
-55 to +150  
-55 to +150  
0.50  
°C  
°C  
°C/W  
Storage Temperature Range  
Thermal Resistance, Junction to Case:  
Tstg  
1N6818  
1N6818R  
qJC  
0.65  
Mechanical Outline  
ThinKey™4  
Datasheet# MSC1029A  

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