5秒后页面跳转
1N6778 PDF预览

1N6778

更新时间: 2024-11-28 06:26:31
品牌 Logo 应用领域
美高森美 - MICROSEMI 整流二极管局域网超快速恢复能力电源超快恢复二极管快速恢复二极管
页数 文件大小 规格书
1页 91K
描述
ULTRAFAST POWER RECTIFIER

1N6778 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active零件包装代码:TO-257
包装说明:R-XSFM-P2针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.41
Is Samacsys:N应用:ULTRA FAST RECOVERY POWER
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:TO-257
JESD-30 代码:R-XSFM-P2JESD-609代码:e0
最大非重复峰值正向电流:140 A元件数量:1
相数:1端子数量:2
最大输出电流:15 A封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:400 V最大反向恢复时间:0.06 µs
表面贴装:NO端子面层:TIN LEAD
端子形式:PIN/PEG端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1N6778 数据手册

  
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
ULTRAFAST POWER RECTIFIER  
Qualified per MIL-PRF-19500/647  
DEVICES  
LEVELS  
JAN  
1N6778  
1N6779  
JANTX  
JANTXV  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
Parameters / Test Conditions  
Symbol  
Value  
Unit  
1N6778  
1N6779  
400  
600  
Peak Repetitive Reverse Voltage  
VRWM  
Vdc  
Average Forward Current (1)  
Peak Surge Forward Current  
TC = +100°C  
IF  
15  
140  
1.8  
Adc  
A (pk)  
°C/W  
IFSM  
RθJC  
Thermal Resistance Junction to Case  
TO-257  
(2 Pin Version)  
Note:  
(1) Derate at 300mA/°C above TC = +100°C  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)  
Parameters / Test Conditions  
Symbol  
Min.  
Max.  
Unit  
Breakdown Voltage  
IR = 10µA (2)  
1N6778  
1N6779  
400  
600  
VBR  
Vdc  
1  
2  
Forward Voltage  
IF = 8Adc (2)  
VF1  
VF2  
1.40  
1.60  
Vdc  
IF = 15Adc (2)  
Reverse Leakage Current  
VR = 320V (2)  
1N6778  
1N6779  
IR1  
10  
µAdc  
mA  
VR = 480V (2)  
Reverse Leakage Current  
VR = 320V (2)  
VR = 480V (2)  
TC = +100°C  
1N6778  
1N6779  
IR2  
1.0  
Reverse Recovery Time  
IF = 0.5, IRM = 1.0, IRR = 0.25  
trr  
60  
ns  
Junction Capacitance  
VR = 5Vdc, f = 1.0MHz  
CJ  
300  
pF  
Notes:  
(2) Pulse test, 300µs, Duty Cycle 2%  
T4-LDS-0017 Rev. 1 (072043)  
Page 1 of 1  

与1N6778相关器件

型号 品牌 获取价格 描述 数据表
1N6779 MICROSEMI

获取价格

ULTRAFAST POWER RECTIFIER
1N6779 INFINEON

获取价格

400V & 600V, 15A, Ultra-Fast Power Rectifiers in TO-257AA Hermetic 2 Pin Package
1N6786 MICROSEMI

获取价格

Rectifier Diode, 1 Phase, 1.5A, Silicon,
1N6786E3 MICROSEMI

获取价格

Rectifier Diode, 1 Phase, 1.5A, Silicon,
1N6787 MICROSEMI

获取价格

Rectifier Diode, 0.75A, Silicon
1N6788 MICROSEMI

获取价格

Rectifier Diode, 0.75A, Silicon
1N6789 MICROSEMI

获取价格

Rectifier Diode, 0.75A, Silicon
1N6791 MICROSEMI

获取价格

SURFACE MOUNT LOW LEAKAGE SCHOTTKY DIODE
1N6792 MICROSEMI

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 25A, 45V V(RRM), Silicon, HERMETIC SEALED,
1N6792R MICROSEMI

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 25A, 45V V(RRM), Silicon, HERMETIC SEALED,