生命周期: | Obsolete | 包装说明: | O-LALF-W2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.80 | 风险等级: | 5.76 |
应用: | ULTRA FAST RECOVERY | 外壳连接: | ISOLATED |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
JESD-30 代码: | O-LALF-W2 | 相数: | 1 |
端子数量: | 2 | 最大输出电流: | 3 A |
封装主体材料: | GLASS | 封装形状: | ROUND |
封装形式: | LONG FORM | 最大反向恢复时间: | 0.05 µs |
表面贴装: | NO | 端子形式: | WIRE |
端子位置: | AXIAL | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N6546 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 3A, Silicon, | |
1N6547E3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 3A, Silicon, | |
1N6548 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 3A, Silicon, | |
1N6548E3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 3A, Silicon, | |
1N6549 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 3A, Silicon, | |
1N6549E3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 3A, Silicon, | |
1N658 | FAIRCHILD |
获取价格 |
General Purpose Diodes | |
1N658A | ETC |
获取价格 |
silicon diode | |
1N658R | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 0.2A, 120V V(RRM), Silicon, | |
1N658X | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 0.2A, 120V V(RRM), Silicon, |