1N6511
Isolated Diode Array with
HiRel MQ, MX, MV, and MSP Screening Options
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated
by a planar process and mounted in a 14-PIN ceramic DIP package for use as
steering diodes protecting up to seven I/O ports from ESD, EFT, or surge by directing
them either to the positive side of the power supply line or to ground (see Figure 1).
An external TVS diode may be added between the positive supply line and ground to
prevent overvoltage on the supply rail. They may also be used in fast switching core-
driver applications. This includes computers and peripheral equipment such as
magnetic cores, thin-film memories, plated-wire memories, etc., as well as decoding or
encoding applications. These arrays offer many advantages of integrated circuits such
as high-density packaging and improved reliability. This is a result of fewer pick and
place operations, smaller footprint, smaller weight, and elimination of various discrete
packages that may not be as user friendly in PC board mounting.
14-PIN Ceramic DIP
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
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Hermetic Ceramic Package
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High Frequency Data Lines
Isolated Diodes to Eliminate Cross-Talk Voltages
High Breakdown Voltage VBR > 75 V at 5 µA
Low Leakage IR< 100nA at 40 V
Low Capacitance C < 4.0 pF
Switching Speeds less than 10 ns
Options for screening in accordance with MIL-PRF-
19500/474 for JAN, JANTX, JANTXV, and JANS are
available by adding MQ, MX, MV, or MSP prefixes
respectively to part numbers. For example, designate
MX1N6511 for a JANTX screen.
RS-232 & RS-422 Interface Networks
Ethernet: 10 Base T
Computer I/O Ports
LAN
Switching Core Drivers
IEC 61000-4 Compatible (see circuit in figure 1)
61000-4-2 ESD: Air 15 kV, contact 8 kW
61000-4-4 (EFT): 40 A – 5/50 ns
61000-4-5 (surge): 12 A 8/20 µs
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
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Reverse Breakdown Voltage of 75 Vdc (Note 1 & 2)
Continuous Forward Current of 300 mA dc (Note 1 & 3)
Peak Surge Current (tp=1/120 s) of 500 mA dc (Note 1)
400 mW Power Dissipation per Junction @ 25oC
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14-PIN Ceramic DIP
Weight 2.05 grams (approximate)
Marking: Logo, part number, date code
Pin #1 to the left of the indent on top of package
Carrier Tubes; 25 pcs (standard)
600 mW Power Dissipation per Package @ 25oC (Note 4)
Operating Junction Temperature range –65 to +150oC
Storage Temperature range of –65 to +200oC
NOTE 1: Each Diode
NOTE 2: Pulsed: PW = 100 ms max; duty cycle <20%
NOTE 3: Derate at 2.4 mA/oC above +25oC
NOTE 4: Derate at 4.8 mW/oC above +25oC
.
ELECTRICAL CHARACTERISTICS (Per Diode) @ 25oC unless otherwise specified
MAXIMUM
REVERSE
RECOVERY TIME
trr
MAXIMUM
FORWARD
VOLTAGE
MAXIMUM
FORWARD
RECOVERY
TIME
MAXIMUM
FORWARD
VOLTAGE
MATCH
MAXIMUM
REVERSE
CURRENT
MAXIMUM
REVERSE
CURRENT
MAXIMUM
CAPACITANCE
(PIN TO PIN)
I = IR = 10 mAdc
F
V
F1
Ct
t
i
L
= 1 mAdc
V
F5
fr
rr
I = 100 mA
I
I
VR = 0 V
F = 1 MHz
F
R1
R2
I = 100 mA
R = 100 ohms
I = 10 mA
(Note 1)
VR = 40 V
µA
VR = 20 V
nA
F
F
PART
NUMBER
V
1
pF
4.0
ns
15
ns
10
mV
5
1N6511
0.1
25
NOTE 1: Pulsed: PW = 300 µs +/- 50 µs, duty cycle <2%, 90 µs after leading edge.
Copyright 2003
Microsemi
Page 1
5-03-2004 REV A
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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