Datasheet > 1N6510TX

1N6510TX

更新时间： 2024-12-02 04:30:43

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描述
Rectifier Diode

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获取价格

数据手册

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1N6510TX 数据手册

1N6510

SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

DATA SHEET 4207, REV. -

Isolated Diode Array

Applications:

 High Frequency Data Lines

 RS-323 & RS-432 Networks

 LAN, Ethernet, I/O Ports

 IEC61000-4 compatible for ESD / EFT / Surge

Features:



Protects up to 8 I/O Ports



Isolated diodes eliminate crosstalk

High Density Packaging

High Breakdown Voltage; High Speed Switching (< 10 nsec)

Low Capacitance; Low Leakage

Hermetic Ceramic package

TX, TXV, S level screening available

Maximum Ratings:

All ratings are at 25 ^oC unless otherwise noted

Characteristics

Symbol

Condition

Max.

Units

Reverse Breakdown Voltage

V_BR

Vdc

Per diode, Pulsed @ I_R= 5 A

P_w=300 s +/- 50µs; duty < 2%

Per diode, Derate at 2.4 mA/^oC

above 25 ^oC

Continuous Forward Current

I_F

300

Peak Surge Current

Power Dissipation

I_FSM

P_D

Per diode, tp=8.3 msec

Per Junction

500

400

500

Per Package, Derate at

4 mW/^oC above 25 ^oC

Max. Operating Temperature

Max. Storage Temperature

T_J

T_stg

-65 to +150

-65 to +200

C

Electrical Characteristics:

All ratings are per diode and at 25 ^oC unless otherwise noted

Characteristics

Symbol

Condition

Max.

Units

I_F= 100mA, Pulsed: P_w=300µs

+/- 50µs; duty cycle < 2%

Max. Forward Voltage Drop

Max. Reverse Current

V_F1

1.00

I_R1

I_R2

@V_R= 40V

@V_R= 20V

0.1

µA

Max. Capacitance (Pin to

Pin)

Max. Forward Recovery

Time

C_T

@V_R= 0V, F=1MHz

I_F= 100mA

4.0

T_FR

Max. Reverse Recovery

Time

Max. Forward Voltage Match

I_f= I_R= 10mA, i_RR= 1mA,

R_L= 100 ohms

I_f= 10mA

T_RR

V_F5

 (631) 586-7600 FAX (631) 242-9798  www.sensitron.com  sales@sensitron.com

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