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1N6510E3 PDF预览

1N6510E3

更新时间： 2024-12-01 20:00:31
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
2页 258K
描述
Rectifier Diode, 8 Element, 0.3A, Silicon, CERAMIC, FP-16

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1N6510E3 技术参数

生命周期：Active包装说明：CERAMIC, FP-16
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.70风险等级：5.69
其他特性：HIGH RELIABILITY配置：SEPARATE, 8 ELEMENTS
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JESD-30 代码：R-CDFP-F16元件数量：8
端子数量：16最大输出电流：0.3 A
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：FLATPACK最大反向恢复时间：0.005 µs
表面贴装：YES端子形式：FLAT
端子位置：DUALBase Number Matches：1

1N6510E3 数据手册

 浏览型号1N6510E3的Datasheet PDF文件第2页 
1N6510  
Isolated Diode Array with  
HiRel MQ, MX, MV, and MSP Screening Options  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
These low capacitance diode arrays are multiple, discrete, isolated junctions  
fabricated by a planar process and mounted in a 16-PIN ceramic flat pack for use as  
steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing  
them either to the positive side of the power supply line or to ground (see figure 1). An  
external TVS diode may be added between the positive supply line and ground to  
prevent over-voltage on the supply rail. They may also be used in fast switching core-  
driver applications. This includes computers and peripheral equipment such as  
magnetic cores, thin-film memories, plated-wire memories, etc., as well as decoding  
or encoding applications. These arrays offer many advantages of integrated circuits  
such as high-density packaging and improved reliability. This is a result of fewer pick  
and place operations, smaller footprint, smaller weight, and elimination of various  
discrete packages that may not be as user friendly in PC board mounting.  
16-PIN Ceramic  
Flat Pack  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
•
•
•
•
•
High Frequency Data Lines  
RS-232 & RS-422 Interface Networks  
Ethernet: 10 Base T  
•
•
•
•
•
•
•
Hermetic Ceramic Package  
Isolated Diodes to Eliminate Cross-Talk Voltages  
High Breakdown Voltage VBR > 75 V at 5 µA  
Low Leakage IR< 100nA at 40 V  
Low Capacitance Ct < 4.0 pF  
Switching Speeds less than 10 ns  
Options for screening in accordance with MIL-PRF-  
19500/474 for JAN, JANTX, JANTXV, and JANS are  
available by adding MQ, MX, MV, or MSP prefixes  
respectively to part numbers. For example, designate  
MX1N6510 for a JANTX screen.  
Computer I/O Ports  
LAN  
Switching Core Drivers  
IEC 61000-4 Compatible (See Circuit in Figure  
1)  
61000-4-2 (ESD): Air 15 kV, contact – 8 kV  
61000-4-4 (EFT): 40 A – 5/50 ns  
61000-4-5 (surge): 12 A, 8/20 µs  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
•
•
16-PIN Ceramic Flat Pack  
•
•
•
•
•
•
•
Reverse Breakdown Voltage of 75 Vdc (Note 1 & 2)  
Continuous Forward Current of 300 mA dc (Note 1 & 3)  
Peak Surge Current (tp=1/120 s) of 500 mA dc (Note 1)  
400 mW Power Dissipation per Junction @ 25oC  
500 mW Power Dissipation per Package @ 25oC (Note 4)  
Operating Junction Temperature range –65 to +150oC  
Storage Temperature range of –65 to +200oC  
Weight 0.5 grams (approximate)  
Marking: Logo, part number, date code and dot  
identifying pin #1  
•
Carrier Tubes; 19 pcs (standard)  
NOTE 1: Each Diode  
NOTE 2: Pulsed: PW = 100 ms max.; duty cycle <20%  
NOTE 3: Derate at 2.4 mA/oC above +25oC  
NOTE 4: Derate at 4.0 mW/oC above +25oC  
ELECTRICAL CHARACTERISTICS (Per Diode) @ 25oC unless otherwise specified  
MAXIMUM  
MAXIMUM  
FORWARD  
VOLTAGE  
MAXIMUM  
CAPACITANCE  
(PIN TO PIN)  
MAXIMUM  
FORWARD  
RECOVERY  
TIME  
MAXIMUM  
FORWARD  
VOLTAGE  
MATCH  
MAXIMUM  
REVERSE  
CURRENT  
MAXIMUM  
REVERSE  
CURRENT  
REVERSE  
RECOVERY TIME  
t
rr  
@
I = IR = 10 mA  
F
V
Ct  
F1  
t
fr  
i
= 1 mA  
V
F5  
rr  
I = 100 mA  
I
I
V
= 0 V;  
F
R1  
R2  
R
I = 100 mA  
R = 100 ohms  
I = 10 mA  
(Note 1)  
VR = 40 V  
µA  
VR = 20 V  
nA  
F = 1 MHz  
pF  
F
L
F
PART  
NUMBER  
V
1
ns  
15  
ns  
10  
mV  
5
1N6510  
0.1  
25  
4.0  
NOTE 1: Pulsed: PW = 300 µs +/- 50 µs, duty cycle <2%, 90 µs after leading edge.  
Copyright 2003  
Microsemi  
Page 1  
5-03-2004 REV A  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
12

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