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1N6509_1 PDF预览

1N6509_1

更新时间: 2024-12-01 06:20:43
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
2页 244K
描述
Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options

1N6509_1 数据手册

 浏览型号1N6509_1的Datasheet PDF文件第2页 
1N6509  
Isolated Diode Array with  
HiRel MQ, MX, MV, and MSP Screening Options  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated  
by a planar process and mounted in a 14-PIN ceramic DIP package for use as steering  
diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing them to  
the positive side of the power supply line and to ground (see Figure 1). An external  
TVS diode may be added between the positive supply line and ground to prevent over-  
voltage on the supply rail. They may also be used in fast switching core-driver  
applications. This includes computers and peripheral equipment such as magnetic  
cores, thin-film memories, plated-wire memories, etc., as well as decoding or encoding  
applications. These arrays offer many advantages of integrated circuits such as high-  
density packaging and improved reliability. This is a result of fewer pick and place  
operations, smaller footprint, smaller weight, and elimination of various discrete  
packages that may not be as user friendly in PC board mounting.  
14-PIN Ceramic DIP  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
High Frequency Data Lines  
RS-232 & RS-422 Interface Networks  
Ethernet: 10 Base T  
Hermetic Ceramic Package  
Isolated Diodes To Eliminate Cross-Talk Voltages  
High Breakdown Voltage VBR > 60 V at 10 µA  
Low Leakage IR< 100nA at 40 V  
Computer I/O Ports  
LAN  
Low Capacitance C < 8.0 pF  
Switching Core Drivers  
IEC 61000-4 Compatible (see circuit in figure 1)  
61000-4-2 ESD: Air 15 kV, contact 8 kW  
61000-4-4 (EFT): 40 A – 5/50 ns  
61000-4-5 (surge): 12 A 8/20 µs  
Options for screening in accordance with MIL-PRF-  
19500/474 for JAN, JANTX, JANTXV, and JANS are  
available by adding MQ, MX, MV, or MSP prefixes  
respectively to part numbers. For example, designate  
MX1N6509 for a JANTX screen.  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
14-PIN Ceramic DIP  
Reverse Breakdown Voltage of 60 Vdc (Note 1 & 2)  
Continuous Forward Current of 300 mA dc (Note 1 & 3)  
Peak Surge Current (tp=1/120 s) of 500 mA dc (Note 1)  
400 mW Power Dissipation per Junction @ 25oC  
600 mW Power Dissipation per Package @ 25oC (Note 4)  
Operating Junction Temperature range –65 to +150oC  
Storage Temperature range of –65 to +200oC  
Weight 2.05 grams (approximate)  
Marking: Logo, part number, date code  
Pin #1 to the left of the indent on top of package  
Carrier tubes; 25 pcs (standard)  
NOTE 1: Each Diode  
NOTE 2: Pulsed: PW = 100 ms max; duty cycle <20%  
NOTE 3: Derate at 2.4 mA/oC above +25oC  
NOTE 4: Derate at 4.8 mW/oC above +25oC  
ELECTRICAL CHARACTERISTICS (Per Diode) @ 25oC unless otherwise specified  
MAXIMUM  
REVERSE  
RECOVERY TIME  
trr  
MAXIMUM  
FORWARD  
VOLTAGE  
MAXIMUM  
FORWARD  
VOLTAGE  
MAXIMUM  
FORWARD  
MAXIMUM  
REVERSE  
CURRENT  
MAXIMUM  
CAPACITANCE  
(PIN TO PIN)  
RECOVERY TIME  
I = IR = 200 mA  
F
V
V
F2  
F1  
Ct  
t
fr  
i = 20 mA  
rr  
I = 100 mA  
I = 500 mA  
I
VR = 0 V  
F = 1 MHz  
F
F
R1  
I = 500 mA  
R = 100 ohms  
L
(Note 1)  
(Note 1)  
VR = 40 V  
µA  
F
PART  
1NNU6M5B0E9R  
1V.5  
0.1  
V
1
pF  
8.0  
ns  
40  
ns  
20  
NOTE 1: Pulsed: PW = 300 µs +/- 50 µs, duty cycle <2%, 90 µs after leading edge.  
Copyright 2003  
Microsemi  
Page 1  
5-03-2004 REV A  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  

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