1N6508S

更新时间： 2024-12-01 13:02:51

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管测试
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1页	28K
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1N6508S 数据手册

1N6508

A Microsemi Company

580 Pleasant St.

Watertown, MA 02472

Phone: 617-924-9280

Fax: 617-924-1235

DIODE ARRAY PRODUCT SPECIFICATION

MONOLITHIC AIR ISOLATED

DIODE ARRAY

FEATURES:

· HERMETIC CERAMIC PACKAGE

· Bv > 60V at 10uA

· Ir < 100nA at 40V

· C < 8.0 pF

Absolute Maximum Ratings:

NOT CONNECTED

Symbol

Parameter

Limit

Unit

VBR(R) *1 *2 Reverse Breakdown Voltage

IO *1 * 3 Continuous Forward Current

IFSM *1

Vdc

.320

.290

.310

.220

.005

MIN

.200

MAX

300

500

400

600

mAdc

.200

.125

Peak Surge Current (tp= 1/120 s)

Power Dissipation per Junction @ 25°C

Power Dissipation per Package @ 25°C

Operating Junction Temperature Range

Storage Temperature Range

.023

.014

PT1

PT2

Top

Tstg

.785

MAX

.070

.030

-65 to +150 °C

-65 to +200 °C

.098

MAX

.100

BSC

NOTE 1: Each Diode

.060

.015

NOTE 2: Pulsed: PW = 100ms max.; duty cycle < 20%

NOTE 3: Derate at 2.4mA/°C above +25 °C

NOTE 4: Derate at 4.0mW/°C above +25 °C

.015

.008

O-15

Electrical Characteristics (Per Diode) @

25°C unless otherwise specified

PACKAGE OUTLINE

Symbol Parameter

Conditions

Min

Max Unit

Vf1

Vf2

IR1

tfr

trr

Forward Voltage

Reverse Current

Capacitance (pin to pin)

Forward Recovery Time

Reverse Recovery Time

If = 100mAdc *1

If = 500mAdc *1

VR = 40 Vdc

VR = 0 Vdc ; f = 1 MHz

If = 500mAdc

Vdc

1.5 Vdc

0.1 uAdc

8.0 pF

If = IR = 200mAdc, irr = 20mAdc, RL = 100 ohms

NOTE 1: Pulsed: PW = 300us +/- 50us, duty cycle < 2%, 90us after leading edge

Sertech reserves the right to make changes to any product design, specification or other

information at any time without prior notice.

MSC1019.PDF Rev - 11/25/98

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