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1N6507S PDF预览

1N6507S

更新时间: 2024-12-02 06:04:39
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
5页 510K
描述
Trans Voltage Suppressor Diode

1N6507S 数据手册

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SG5768, SG5770, SG5772, SG5774  
SG6506/SG6507/SG6508/SG6509  
DIODE ARRAY CIRCUITS  
DESCRIPTION  
FEATURES  
The Linfinity series of diode arrays feature high breakdown, high speed  
diodes in a variety of configurations.  
60V minimum breakdown voltage  
500mA current capability per diode  
Fast switching speeds: typically less than  
10ns  
Each array configuration consists of either common anode diodes,  
common cathode diodes, or a combination of common anode and  
common cathode diodes.  
Low leakage current  
HIGH RELIABILITY FEATURES  
Individual diodes within the array have 60V minimum breakdown  
voltage, can handle 500mA of current and typically switch in less than  
10 nanoseconds.  
MIL-S-19500/474 QPL - 1N5768 - 1N6506  
- 1N5770 - 1N6507  
- 1N5772 - 1N6508  
Each of the array configurations is available in ceramic DIP or ceramic  
flatpack and can be processed to JANTXV, JANTX, or JAN flows at  
Linfinity’s MIL-S-19500 facility.  
- 1N5774 - 1N6509  
JANTXV, JANTX & JAN available  
LMI level "S" processing available  
CIRCUIT DIAGRAMS  
COMMON CATHODE  
SG5768/SG6506  
COMMON ANODE  
SG5770/SG6507  
COMMON ANODE / COMMON CATHODE  
SG5772/SG6508  
DUAL COMMON ANODE / COMMON CATHODE  
SG5774/SG6509  
6/90 Rev 1.1 2/94  
LINFINITY Microelectronics Inc.  
Copyright 1994  
11861 Western Avenue Garden Grove, CA 92841  
1
(714) 898-8121 FAX: (714) 893-2570  

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