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1N6487US PDF预览

1N6487US

更新时间: 2024-11-05 22:24:07
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管齐纳二极管测试
页数 文件大小 规格书
2页 124K
描述
1.5 WATT ZENER DIODES

1N6487US 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active包装说明:O-LELF-R2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.13Is Samacsys:N
其他特性:METALLURGICALLY BONDED外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJESD-30 代码:O-LELF-R2
JESD-609代码:e0元件数量:1
端子数量:2封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:1.5 W认证状态:Not Qualified
标称参考电压:3.9 V表面贴装:YES
技术:ZENER端子面层:TIN LEAD
端子形式:WRAP AROUND端子位置:END
处于峰值回流温度下的最长时间:NOT SPECIFIED最大电压容差:5%
工作测试电流:64 mABase Number Matches:1

1N6487US 数据手册

 浏览型号1N6487US的Datasheet PDF文件第2页 
1N6485US  
THRU  
• AVAILABLE IN JAN, JANTX, JANTXV AND JANS  
PER MIL-PRF-19500/406  
1N6491US  
AND  
1N4460US  
AND  
• 1.5 WATT ZENER DIODES  
• NON CAVITY CONSTRUCTION  
• METALLURGICALLY BONDED  
1N4461US  
MAXIMUM RATINGS  
Operating Temperature: -65°C to +175°C  
Storage Temperature: -65°C to +200°C  
Power Dissapation: 1.5W @ T =+25°C  
A
Power Derating: 10mW/°C above T =+25°C  
A
Forward Voltage: 1.0V dc @ I =200mA dc  
F
1.5 V dc @ I =1A dc  
F
MILLIMETERS  
INCHES  
DIM MIN  
MAX  
2.62  
0.71  
5.08  
MIN MAX  
0.091 0.103  
0.019 0.028  
0.168 0.200  
0.003MIN.  
D
F
G
2.31  
0.48  
4.28  
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified  
S
0.08MIN.  
ZENER  
TEST  
DYNAMIC  
KNEE  
TEST  
REVERSE TEST  
MAXIMUM V  
Z
(REG)  
MAXIMUM  
SURGE  
VOLTAGE CURRENT IMPEDENCE IMPEDENCE CURRENT CURRENT VOLTAGE CURRENT  
(NOM.)  
±5%  
V
V
Z
TYPE  
I
(MAX.)  
(MAX.)  
I
(MAX.)  
I @V  
R
V
I
ZM  
ZT  
ZK  
R
Z
@I  
Z
@I  
ZT ZT  
ZK ZT  
R
FIGURE 1  
VOLTS  
mA  
OHMS  
OHMS  
mA  
µ A  
VOLTS  
MA  
VOLTS  
AMPS  
1N6485US  
1N6486US  
1N6487US  
1N6488US  
3.3  
3.6  
3.9  
4.3  
76.0  
69.0  
64.0  
58.0  
10  
10  
9
400  
400  
400  
400  
1.0  
1.0  
1.0  
1.0  
50  
50  
35  
5.0  
1.0  
1.0  
1.0  
1.0  
433  
397  
366  
332  
.90  
.80  
.75  
.70  
4.2  
3.9  
3.6  
3.3  
DESIGN DATA  
9
1N6489US  
1N6490US  
1N6491US  
1N4460US  
1N4461US  
4.7  
5.1  
5.6  
6.2  
6.8  
53.0  
49.0  
45.0  
40.0  
37.0  
8
7
5
4
2.5  
500  
500  
600  
200  
200  
1.0  
1.0  
1.0  
1.0  
1.0  
4.0  
1.0  
0.5  
10.0  
5.0  
1.0  
1.0  
2.0  
3.72  
4.08  
304  
280  
255  
230  
210  
.60  
.50  
.40  
.35  
.30  
3.0  
2.7  
2.5  
2.3  
2.1  
CASE: D-5A, hermetically sealed glass  
case, per MIL-PRF- 19500/406  
LEAD FINISH: Tin / Lead  
THERMAL RESISTANCE: (R  
20 °C/W maximum at L = 0  
):  
OJEC  
THERMAL IMPEDANCE: (Z  
°C/W maximum  
): 4.5  
OJX  
POLARITY: Diode to be operated with  
the banded (cathode) end positive.  
MOUNTING SURFACE SELECTION:  
The Axial Coefficient of Expansion  
(COE) of this device is approximately  
+ 4PPM / °C. The COE of the Mounting  
Surface System should be selected to  
provide a suitable match with this  
device.  
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841  
PHONE (978) 620-2600  
FAX (781) 689-0803  
WEBSITE: http://www.microsemi.com  
153  

1N6487US 替代型号

型号 品牌 替代类型 描述 数据表
JANTX1N6487US MICROSEMI

完全替代

1.5 WATT ZENER DIODES
JANS1N6487US MICROSEMI

完全替代

1.5 WATT ZENER DIODES
JANS1N6487 MICROSEMI

完全替代

1.5 WATT ZENER DIODES

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