Datasheet > 1N6361

1N6361

更新时间： 2024-11-03 20:29:07

品牌	Logo	应用领域
DIGITRON		/
页数	文件大小	规格书
3页	1148K
描述
Transient Voltage Suppressor, Uni-directional; Max Peak Repetitive Reverse Voltage: 1500; Max TMS Bridge Input Voltage: 18; Max DC Reverse Voltage: 2; Sn/Pb - Pb-free

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技术参数
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1N6361 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.81
Is Samacsys：	N	Base Number Matches：	1

1N6361 数据手册

1N6356-1N6372

Transient Voltage Suppressor

1500 Watt

High-reliability discrete products

and engineering services since 1977

FEATURES:



Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number

Available Non-RoHS (standard) or RoHS compliant (add PBF suffix)

1500 Watts for 10/1000µs with repetition rate of 0.01% or less at lead temperature T_L= 25°C.

MAXIMUM RATINGS

Characteristics

Value

50°C/W junction to lead at 0.375” from body or 110°C/W junction to ambient when mounted

on FR4 PC board with 4 mm²copper pads and track width of 1mm, length 25mm

Thermal resistance

≤ 125°C 3/8” or 10 mm from body

1 Watt at T_L

DC power dissipation

Forward surge current

200 Amps for 8.3ms half-sine wave at T_A= 25°C for unidirectional only (1N6356-1N6364)

Solder temperature

260°C for 10 sec maximum

-65° to 175°C

Operating and storage temperature

ELECTRICAL CHARACTERISTICS UNIDIRECTIONAL (T_A= 25°C)

Maximum

clamping voltage

Maximum

clamping voltage

Maximum

reverse leakage

@ V_WM

Minimum

breakdown

voltage @ 1.0mA

Standoff

voltage⁽¹⁾

Maximum peak

pulse current

Part number

I_PP1= 1A

V_C

I_PP2= 10A

V_C

V_WM

Volts

5.0

I_D

µA

300

V_(BR)

Volts

6.0

I_PP3

Amps

160

100

Volts

7.1

Volts

7.5

1N6356

1N6357

1N6358

1N6359

1N6360

1N6361

1N6362

1N6363

1N6364

8.0

9.4

11.3

13.7

16.1

20.1

24.2

29.8

50.6

63.3

11.5

14.1

16.5

20.6

25.2

32.0

54.3

70.0

10.0

12.0

15.0

18.0

22.0

36.0

45.0

11.7

14.1

17.6

21.2

25.9

42.4

52.9

ELECTRICAL CHARACTERISTICS - BIDIRECTIONAL (T_A= 25°C)

Maximum

clamping voltage

Maximum

clamping voltage

Maximum

reverse leakage

@ V_WM

Minimum

breakdown

voltage @ 1.0mA

Standoff

voltage⁽¹⁾

Maximum peak

pulse current

Part number

I_PP1= 1A

V_C

I_PP2= 10A

V_C

V_WM

Volts

8.0

I_D

µA

V_(BR)

Volts

9.4

I_PP3

Amps

100

Volts

11.4

14.1

16.7

20.8

24.8

30.8

Volts

11.6

14.5

17.1

21.4

25.5

32.0

1N6365

1N6366

1N6367

1N6368

1N6369

1N6370

10.0

12.0

15.0

18.0

22.0

11.7

14.1

17.6

21.2

25.9

Rev. 20160527

12 3

中文翻译

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与1N6361相关器件

型号	品牌	获取价格	描述	数据表
1N6361C	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 18V V(RWM), Bidirectional,
1N6361CE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 18V V(RWM), Bidirectional,
1N6361CTR	MICROSEMI	获取价格	暂无描述
1N6361CTRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 18V V(RWM), Bidirectional,
1N6361E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 18V V(RWM), Unidirectional, 1 Element, Silicon, DO-
1N6361E3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 18V V(RWM), Unidirectional, 1 Element, Silicon, DO-
1N6361MPT-18C	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 18V V(RWM), Bidirectional, 1 Element, Silicon, DO-1
1N6361TRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 18V V(RWM), Unidirectional,
1N6362	MICROSEMI	获取价格	TRANSIENT ABSORPTION ZENER
1N6362	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 22V V(RWM), Unidirectional, 1 Element, Silicon, HER

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