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1N6300.TR PDF预览

1N6300.TR

更新时间: 2024-11-16 14:31:55
品牌 Logo 应用领域
商升特 - SEMTECH 局域网二极管
页数 文件大小 规格书
4页 341K
描述
Trans Voltage Suppressor Diode, 1500W, 130V V(RWM), Unidirectional, 1 Element, Silicon, DO-201

1N6300.TR 技术参数

生命周期:Obsolete包装说明:O-PALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.08
Is Samacsys:N最大击穿电压:176 V
最小击穿电压:144 V外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-201
JESD-30 代码:O-PALF-W2最大非重复峰值反向功率耗散:1500 W
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM极性:UNIDIRECTIONAL
认证状态:Not Qualified最大重复峰值反向电压:130 V
表面贴装:NO技术:AVALANCHE
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

1N6300.TR 数据手册

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