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1N6263 PDF预览

1N6263

更新时间: 2024-09-24 03:54:47
品牌 Logo 应用领域
固锝 - GOOD-ARK 信号二极管肖特基二极管
页数 文件大小 规格书
2页 59K
描述
Small-Signal Diode Schottky Diodes

1N6263 技术参数

生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.81
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 V最大非重复峰值正向电流:2 A
元件数量:1最高工作温度:200 °C
最大输出电流:0.1 A最大重复峰值反向电压:60 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY

1N6263 数据手册

 浏览型号1N6263的Datasheet PDF文件第2页 
GALAXY ELECTRICAL  
1N6263  
BL  
VOLTAGE RANGE: 60 V  
SMALL SIGNAL SCHOTTKY DIODE  
POWER DISSIPATION:400 mW  
FEATURES  
For general purpose applications  
DO - 35(GLASS)  
Metal silicon schottkybarrier device which is protected  
bya PN junction guard ring. The low forward voltage  
drop and fast switching make it ideal for protection of  
MOS devices,steering,biasing and coupling diodes for  
fast switching and low logic level applications  
MECHANICAL DATA  
Case:JEDEC DO--35,glass case  
Polarity: Color band denotes cathode end  
Weight: Approx. 0.13 gram  
ABSOLUTE RATINGS(LIMITING VALUES)  
Symbols  
Value  
60.0  
UNITS  
V
mW  
A
Peak reverse voltage  
VRRM  
Ptot  
4001)  
2.0  
Pow er dissipation (Infinite Heat Sink)  
Maximumsingle cycle surge 10 s square wave  
IFSM  
TJ  
µ
Junction tenperature  
125  
Storage temperature range  
c-55 ---+ 150  
TSTG  
1)Valid provided that electrodes are kept at ambient temperature.  
ELECTRICAL CHARACTERISTICS  
(Ratings at 25 ambient temperature unless otherw ise specified)  
Symbols  
Typ.  
Max.  
Min.  
60.0  
UNITS  
Reverse breakdow n voltage  
Leakage current @ VR=50V  
@ IR=10 A  
VR  
IR  
V
200.0  
0.41  
1.0  
nA  
V
Forw ard voltage drop @ IF=1mA  
IF=15mA  
VF  
VF  
CJ  
V
Junction capacitance @ VR=0V,f=1MHz  
2.2  
pF  
ns  
/mW  
Reverse recovery time @ IF=IR=5mA,recover to 0.1 IR  
Termal resistance junction to ambient air  
1
trr  
0.3  
RθJA  
www.galaxycn.com  
1.  
Document Number 0265002  
BLGALAXY ELECTRICAL  

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