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1N60L-A-AA3-B PDF预览

1N60L-A-AA3-B

更新时间: 2024-10-31 07:37:27
品牌 Logo 应用领域
友顺 - UTC /
页数 文件大小 规格书
6页 286K
描述
Small Signal Field-Effect Transistor, 1.2A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE PACKAGE-4

1N60L-A-AA3-B 数据手册

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UNISONIC TECHNOLOGIES CO., LTD  
1N60  
Power MOSFET  
1.2 Amps, 600/650 Volts  
N-CHANNEL MOSFET  
„
DESCRIPTION  
The UTC 1N60 is a high voltage MOSFET and is designed to  
have better characteristics, such as fast switching time, low gate  
charge, low on-state resistance and have a high rugged  
avalanche characteristics. This power MOSFET is usually used at  
high speed switching applications in power supplies, PWM motor  
controls, high efficient DC to DC converters and bridge circuits.  
„
FEATURES  
* RDS(ON) =11.5@VGS = 10V.  
* Ultra Low gate charge (typical 5.0nC)  
* Low reverse transfer capacitance (CRSS = typical 3.0 pF)  
* Fast switching capability  
* Avalanche energy specified  
* Improved dv/dt capability, high ruggedness  
„
SYMBOL  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Normal  
Lead Free Plating  
1N60L-x-AA3-B  
1N60L-x-T92-B  
1N60L-x-T92-K  
1N60L-x-TA3-T  
1N60L-x-TF3-T  
1N60L-x-TM3-T  
1N60L-x-TN3-R  
1N60L-x-TN3-T  
Halogen Free  
1N60G-x-AA3-B  
1N60G-x-T92-B  
1N60G-x-T92-K  
1N60G-x-TA3-T  
1N60G-x-TF3-T  
1N60G-x-TM3-T  
1N60G-x-TN3-R  
1N60G-x-TN3-T  
1
2
3
S
S
S
S
S
S
S
S
1N60-x-AA3-B  
1N60-x-T92-B  
1N60-x-T92-K  
1N60-x-TA3-T  
1N60-x-TF3-T  
1N60-x-TM3-T  
1N60-x-TN3-R  
1N60-x-TN3-T  
SOT-223  
TO-92  
Tape Reel  
Tape Box  
Bulk  
G
G
G
G
G
G
G
G
D
D
D
D
D
D
D
D
TO-92  
TO-220  
TO-220F  
TO-251  
TO-252  
TO-252  
Tube  
Tube  
Tube  
Tape Reel  
Tube  
Note: Pin Assignment: G: Gate D: Drain S: Source  
www.unisonic.com.tw  
Copyright © 2010 Unisonic Technologies Co., Ltd  
1 of 6  
QW-R502-052,H  

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