Datasheet > 1N6098R

1N6098R

更新时间： 2024-11-19 12:26:27

品牌	Logo	应用领域
NAINA		二极管
页数	文件大小	规格书
2页	123K
描述
Schottky Power Diode, 50A

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1N6098R 数据手册

1N6097 thru

1N6098R

Naina Semiconductor Ltd.

Schottky Power Diode, 50A

Features

•

Fast Switching

Low forward voltage drop

High surge capability

High efficiency, low power loss

Normal and Reverse polarity

DO-203AB (DO-5)

Maximum Ratings (T_J= 25^oC, unless otherwise noted)

Parameter

Test Conditions

Symbol

1N6097(R)

1N6098(R)

Units

Repetitive peak reverse voltage

RMS reverse voltage

DC blocking voltage

V_RRM

V_RMS

V_DC

I_F

Continuous forward current

T_C≤ 100^oC

T_C= 25^oC

Surge non-repetitive forward

current, half-sine wave

I_FSM

V_F

400

0.7

400

0.7

I_F= 50 A

T_J= 25^oC

V_R= 30V, T_J= 25^oC

V_R= 30V, T_J= 125^oC

Forward voltage

Reverse current

I_R

250

Thermal & Mechanical Specifications (T_J= 25^oC, unless otherwise noted)

Parameters

Symbol

1N6097(R)

1N6098(R)

Units

^oC/W

^oC

Maximum thermal resistance, junction to case

Operating junction temperature range

Storage temperature

R_th(JC)

T_J

1.0

-65 to 150

-65 to 175

4.0

T_stg

^oC

Mounting torque (non-lubricated threads)

Approximate allowable weight

17.0

D-95, Sector 63, Noida – 201301, India

•

Tel: 0120-4205450

•

Fax: 0120-4273653

sales@nainasemi.com

•

www.nainasemi.com

中文翻译

下载PDF

与1N6098R相关器件

型号	品牌	获取价格	描述	数据表
1N6099	FAIRCHILD	获取价格	General Purpose Diodes
1N6099T26A	TI	获取价格	150V, SILICON, SIGNAL DIODE
1N6099T26R	TI	获取价格	150V, SILICON, SIGNAL DIODE
1N6099T50A	TI	获取价格	150V, SILICON, SIGNAL DIODE
1N6099T50R	TI	获取价格	150V, SILICON, SIGNAL DIODE
1N609A	NJSEMI	获取价格	STUD BASE RECTIFIERS
1N60A	MICROSEMI	获取价格	Optimized for Radio Frequency Response
1N60A	UTC	获取价格	0.5 Amps, 600 Volts N-CHANNEL MOSFET
1N60A	NJSEMI	获取价格	Diode 45V 0.05A 2-Pin DO-7
1N60A_09	UTC	获取价格	0.5 Amps, 600/650 Volts N-CHANNEL MOSFET