Datasheet > 1N5920

1N5920

更新时间： 2024-11-20 14:44:11

品牌	Logo	应用领域
鲁光 - LGE		稳压二极管
页数	文件大小	规格书
3页	1994K
描述
稳压二极管

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技术参数
数据手册

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1N5920 技术参数

Case Style：	DO-41	Pd（W）：	1.5
VZ(Min)：	-	VZ(Nom)：	6.2
VZ(Max)：	-	IZT(mA)：	60.5
IR(uA)：	5	VR(V)：	4
class：	Diodes

1N5920 数据手册

1N5913A-1N5956A

Zener Diodes

POWER DISSIPATION: 1.5W

DO - 41

Features

Silicon planar power zener diodes

No suffix indicates a ±20% tolerance on nominal Vz.

Suffix "A" denotes a ±10%,Suffix "B" denotes a ±5%,

Suffix "C" denotes a ±2%,Suffix "D" denotes a ±1%.

1.00 (25.4)

0.107 (2.7)

MIN.

0.080 (2.0)

0.205 (5.2)

0.166 (4.2)

Mechanical Data

1.00 (25.4)

Case:DO-41

0.034 (0.86)

MIN.

0.028 (0.71)

Terminals: Solderable per MIL-STD-202, Method 208

Polarity: Cathode Band

Marking: Type Number

Weight: 0.339 grams

Dimensions in inches and ( millimeters )

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ambient temperature unless otherwise specified.

Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.

SYMBOL

VALUE

UNIT

Zener current (see Table "Characteristics")

1.5¹⁾

150

P_tot

T_J

Power dissipation at T_amb=25

Junction temperature

T_STG

-55---+150

Storage temperature range

SYMBOL

R_θ_JL

MIN

TYP

MAX

45¹⁾

1.2

UNIT

Thermal resistance junction to lead

Forw ard voltage at I_F=200mA

NOTES: (1) Valid provided that leads at a distance of 10 mm from case are kept at ambient temperature.

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

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