1N5917BTA

更新时间： 2024-10-14 13:03:43

品牌	Logo	应用领域
安森美 - ONSEMI		稳压器二极管齐纳二极管
页数	文件大小	规格书
8页	70K
描述
ZENER DIODE,SINGLE, TWO TERMINAL,4.7V V(Z),5%,DO-41

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中文翻译

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技术参数
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1N5917BTA 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.25	Is Samacsys：	N
配置：	SINGLE	二极管类型：	ZENER DIODE
最大动态阻抗：	5 Ω	元件数量：	1
最高工作温度：	200 °C	标称参考电压：	4.7 V
子类别：	Voltage Reference Diodes	表面贴装：	NO
最大电压容差：	5%	工作测试电流：	79.8 mA
Base Number Matches：	1

1N5917BTA 数据手册

1N5913B Series

3 W DO−41 Surmetict 30

Zener Voltage Regulators

This is a complete series of 3 W Zener diodes with limits and

excellent operating characteristics that reflect the superior capabilities

of silicon−oxide passivated junctions. All this in an axial−lead,

transfer−molded plastic package that offers protection in all common

environmental conditions.

http://onsemi.com

Features

Cathode

Anode

• Zener Voltage Range − 3.3 V to 200 V

• ESD Rating of Class 3 (>16 KV) per Human Body Model

• Surge Rating of 98 W @ 1 ms

• Maximum Limits Guaranteed on up to Six Electrical Parameters

• Package No Larger than the Conventional 1 W Package

• Pb−Free Packages are Available

AXIAL LEAD

CASE 59

PLASTIC

STYLE 1

Mechanical Characteristics

CASE: Void free, transfer−molded, thermosetting plastic

FINISH: All external surfaces are corrosion resistant and leads are

readily solderable

MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:

260°C, 1/16″ from the case for 10 seconds

MARKING DIAGRAM

59xxB

YYWWG

POLARITY: Cathode indicated by polarity band

MOUNTING POSITION: Any

= Assembly Location

1N59xxB = Device Number

= Year

= Work Week

= Pb−Free Package

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

(Note: Microdot may be in either location)

Max. Steady State Power Dissipation

@ T = 75°C, Lead Length = 3/8″

Derate above 75°C

mW/°C

ORDERING INFORMATION

Steady State Power Dissipation

†

Device

Package

Shipping

@ T = 50°C

Derate above 50°C

6.67

mW/°C

°C

1N59xxB, G

Axial Lead

(Pb−Free)

2000 Units/Box

Operating and Storage

Temperature Range

T , T

−65 to

+200

stg

1N59xxBRL, G

Axial Lead

(Pb−Free)

6000/Tape & Reel

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

April, 2006 − Rev. 5

1N5913B/D

12 3 4 5 6 7 8

中文翻译

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与1N5917BTA相关器件

型号	品牌	获取价格	描述	数据表
1N5917B-TB-LF	WTE	获取价格	Zener Diode
1N5917BUR-1	MICROSEMI	获取价格	METALLURGICALLY BONDED GLASS SURFACE MOUNT 1.5 WATT ZENERS
1N5917BUR-1A	MICROSEMI	获取价格	Zener Diode, 4.7V V(Z), 10%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GL
1N5917BUR-1ATR	MICROSEMI	获取价格	Zener Diode, 4.7V V(Z), 10%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GL
1N5917BUR-1B	MICROSEMI	获取价格	Zener Diode, 4.7V V(Z), 5%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLA
1N5917BUR-1BTR	MICROSEMI	获取价格	Zener Diode, 4.7V V(Z), 5%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLA
1N5917BUR-1C	MICROSEMI	获取价格	Zener Diode, 4.7V V(Z), 2%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLA
1N5917BUR-1CTR	MICROSEMI	获取价格	Zener Diode, 4.7V V(Z), 2%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLA
1N5917BUR-1D	MICROSEMI	获取价格	Zener Diode, 4.7V V(Z), 1%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLA
1N5917BUR-1DTR	MICROSEMI	获取价格	暂无描述

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