Datasheet > 1N5821

1N5821

更新时间： 2024-09-24 22:52:19

品牌	Logo	应用领域
智威 - ZOWIE		二极管
页数	文件大小	规格书
2页	51K
描述
SCHOTTKY BARRIER RECTIFIER

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中文翻译

获取价格

数据手册

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1N5821 数据手册

1N5820 THRU 1N5822

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 40 Volts

Forward Current - 3.0 Amperes

DO-201AD

FEATURES

* The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

* Metal silicon junction, majority carrier conduction

* Guardring for overvoltage protection

* Low power loss, high efficiency

0.210(5.3)

* High current capability, low forward voltage drop

* High surge capability

0.190(4.8)

DIA.

* For use in low voltage, high frequency inverters,

free wheeling, and polarity protection applications

* High temperature soldering guaranteed :

260^oC / 10 seconds, 0.375" (9.5mm) lead length,

5 lbs. (2.3kg) tension

MECHANICAL DATA

0.052(1.3)

Case : JEDEC DO-201AD Molded plastic body

Terminals : Plated axial leads, solderable per MIL-STD-750,

Method 2026

0.048(1.2)

DIA.

Polarity : Color band denotes cathode end

Mounting Position : Any

Weight : 0.04 ounce, 1.12 grams

*Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ^oC ambient temperature

SYMBOLS

1N5820

1N5821

1N5822

UNITS

unless otherwise specified.

Volts

Maximum repetitive peak reverse voltage

Maximum RMS voltage

VRRM

VRMS

VDC

Maximum DC blocking voltage

Maximum average forward rectified current

0.375" (9.5mm) lead length at TL=95^oC

I(AV)

IFSM

3.0

Amps

Peak forward surge current 8.3ms single half sine-wave

superimposed on rated load (JEDEC Method)

Maximum instantaneous forward voltage at 3.0 A

Maximum instantaneous forward voltage at 9.4 A

0.475

0.850

0.500

0.900

0.525

0.950

Volts

Maximum instantaneous reverse

current at rated DC reverse voltage

TA=25^oC

TA=100^oC

2.0

20.0

Typical junction capacitance ( NOTE 1 )

Typical thermal resistance ( NOTE 2 )

250

^oC / W

^oC

Operating junction and storage temperature range

TJ,TSTG

-65 to +125

NOTES : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts

(2) Thermal resistance from junction to lead vertical P.C.B. mounted, 0.5" (12.7mm) lead length with 2.5 x 2.5" (63.5 x 63.5mm) copper pad

Zowie Technology Corporation

REV. : 0

中文翻译

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与1N5821相关器件

型号	品牌	获取价格	描述	数据表
1N5821/4-E3	VISHAY	获取价格	DIODE 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5821/4F-E3	VISHAY	获取价格	DIODE 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5821/4H-E3	VISHAY	获取价格	DIODE 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5821/56	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 30V V(RRM), Silicon, DO-201AD, PLASTIC
1N5821/62	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 30V V(RRM), Silicon, DO-201AD, PLASTIC
1N5821/64	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 30V V(RRM), Silicon, DO-201AD, PLASTIC
1N5821/64-E3	VISHAY	获取价格	DIODE 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5821/65	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 30V V(RRM), Silicon, DO-201AD, PLASTIC
1N5821/66	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 30V V(RRM), Silicon, DO-201AD, PLASTIC
1N5821/70	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 30V V(RRM), Silicon, DO-201AD, PLASTIC

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