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1N5821 PDF预览

1N5821

更新时间： 2024-10-15 14:52:15
品牌 Logo 应用领域
WON-TOP /
页数 文件大小 规格书
4页 41K
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Axial

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1N5821 数据手册

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®
1N5820 – 1N5822  
3.0A SCHOTTKY BARRIER DIODE  
WON-TOP ELECTRONICS  
Features  
Schottky Barrier Chip  
Guard Ring for Transient and ESD Protection  
Surge Overload Rating to 80A Peak  
Low Power Loss, High Efficiency  
Ideally Suited for Use in High Frequency  
SMPS, Inverters and As Free Wheeling Diodes  
A
B
A
Mechanical Data  
C
Case: DO-201AD, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: Cathode Band  
Weight: 1.2 grams (approx.)  
Mounting Position: Any  
Marking: Type Number  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
D
DO-201AD  
Min  
Dim  
A
Max  
—
25.4  
B
7.20  
9.50  
1.30  
5.30  
C
1.20  
D
4.80  
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Symbol  
1N5820  
1N5821  
1N5822  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
20  
14  
30  
40  
28  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
21  
V
A
Average Rectified Output Current (Note 1) @TL = 95°C  
3.0  
Non-Repetitive Peak Forward Surge Current 8.3ms  
Single Half Sine-Wave Superimposed on Rated Load  
(JEDEC Method)  
IFSM  
80  
A
Forward Voltage  
@IF = 3.0A  
@IF = 9.4A  
0.475  
0.850  
0.500  
0.900  
0.525  
0.950  
VFM  
IRM  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 100°C  
2.0  
20  
mA  
Thermal Resistance, Junction to Ambient (Note 2)  
Thermal Resistance, Junction to Lead (Note 2)  
RθJA  
RθJL  
28  
10  
°C/W  
Operating Temperature Range  
Storage Temperature Range  
TJ  
-65 to +125  
-65 to +150  
°C  
°C  
TSTG  
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.  
2. Vertical PCB mounting with 12.7mm lead length on 63.5 x 63.5mm copper pad.  
© Won-Top Electronics Co., Ltd.  
Revision: September, 2012  
www.wontop.com  
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与1N5821相关器件

型号 品牌 获取价格 描述 数据表
1N5821/4-E3 VISHAY

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 		DIODE 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5821/4F-E3 VISHAY

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 		DIODE 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5821/4H-E3 VISHAY

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 		DIODE 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5821/56 VISHAY

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 		Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 30V V(RRM), Silicon, DO-201AD, PLASTIC
1N5821/62 VISHAY

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 		Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 30V V(RRM), Silicon, DO-201AD, PLASTIC
1N5821/64 VISHAY

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 		Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 30V V(RRM), Silicon, DO-201AD, PLASTIC
1N5821/64-E3 VISHAY

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 		DIODE 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5821/65 VISHAY

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 		Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 30V V(RRM), Silicon, DO-201AD, PLASTIC
1N5821/66 VISHAY

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 		Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 30V V(RRM), Silicon, DO-201AD, PLASTIC
1N5821/70 VISHAY

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 		Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 30V V(RRM), Silicon, DO-201AD, PLASTIC

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