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1N5821 PDF预览

1N5821

更新时间: 2024-11-13 12:32:27
品牌 Logo 应用领域
TYSEMI 二极管
页数 文件大小 规格书
2页 145K
描述
High current capability ,low forward voltage drop Low Power Loss, High Efficiency

1N5821 数据手册

 浏览型号1N5821的Datasheet PDF文件第2页 
Product specification  
1N5820 -1N5822  
DO-201AD  
Features  
High current capability ,low forward voltage drop  
Low Power Loss, High Efficiency  
High surge capability  
Dimensions in inches and (millimeters)  
Absolute Maximum Ratings Ta = 25  
Parameter  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
Symbol  
VRRM  
VRWM  
VR  
1N5820  
20  
1N5821  
30  
1N5822  
40  
Unit  
V
DC Blocking Voltage  
RMS Reverse Voltage  
VR(RMS)  
IO  
14  
21  
28  
V
A
3.0  
Average Rectified Output Current *1 @ TL = 95  
Non-Repetitive Peak Forward Surge Current 8.3ms  
single half sine-wave superimposed on rated load  
IFSM  
VFM  
IRM  
80  
A
V
Forward Voltage *2  
@ IF =3.0A  
@ IF = 9.4A  
0.500  
0.900  
2.0  
0.525  
0.950  
0.475  
0.850  
Peak Reverse Leakage Current @ TA = 25  
at Rated DC Blocking Voltage *2 @ TA = 100  
mA  
20  
40  
R
R
JA  
JL  
/W  
/W  
Typical Thermal Resistance *3  
10  
-65 to 125  
Operating and Storage Temperature Range  
Tj, TSTG  
*1. Measured at ambient temperature at a distance of 9.5mm from the case.  
*2. Short duration test pulse used to minimize self-heating effect.  
*3. Thermal resistance from junction to lead vertical P.C.B. mounted, 0.500" (9.5mm) lead length with 2.5 X 2.5"  
(63.5 X 63.5mm) copper pads.  
4008-318-123  
1 of 2  
http://www.twtysemi.com  
sales@twtysemi.com  

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