Datasheet > 1N5820H

1N5820H

更新时间： 2024-11-29 12:51:39

品牌	Logo	应用领域
智威 - ZOWIE		/
页数	文件大小	规格书
2页	172K
描述
SCHOTTKY BARRIER RECTIFIER

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中文翻译

获取价格

数据手册

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1N5820H 数据手册

1N5820H THRU 1N5822H

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 40 Volts

Forward Current - 3.0 Amperes

DO-201AD

FEATURES

* Halogen-free type

* Metal silicon junction, majority carrier conduction

* Guardring for overvoltage protection

* Low power loss, high efficiency, High surge capability

* High current capability, low forward voltage drop

* For use in low voltage, high frequency inverters,

free wheeling, and polarity protection applications

* High temperature soldering guaranteed :

260^oC / 10 seconds, 0.375" (9.5mm) lead length,

5 lbs. (2.3kg) tension

0.220(5.6)

0.190(4.8)

DIA.

* The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

MECHANICAL DATA

Case : JEDEC DO-201AD Molded plastic body

Terminals : Tin Plated, solderable per MIL-STD-750,

Method 2026

0.052(1.3)

0.048(1.2)

DIA.

Polarity : Color band denotes cathode end

Weight : 0.04 ounce, 1.12 grams

*Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ^oC ambient temperature

SYMBOLS

1N5820H

1N5821H

1N5822H

UNITS

unless otherwise specified.

Volts

Maximum repetitive peak reverse voltage

Maximum RMS voltage

RRM

RMS

Maximum DC blocking voltage

VDC

Maximum average forward rectified current

(AV)

3.0

Amps

0.375" (9.5mm) lead length at TA

=95^oC

Peak forward surge current 8.3ms single half sine-wave

superimposed on rated load (JEDEC Method)

IFSM

Maximum instantaneous forward voltage at 3.0 A

Maximum instantaneous forward voltage at 9.4 A

0.475

0.850

0.500

0.900

0.525

0.950

Volts

Maximum instantaneous reverse

current at rated DC reverse voltage

=25^oC

=100^oC

2.0

20.0

Typical junction capacitance ( NOTE 1 )

Typical thermal resistance ( NOTE 2 )

250

^oC / W

^oC

Operating junction and storage temperature range

,TSTG

-65 to +125

NOTES : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts

(2) Thermal resistance from junction to lead vertical P.C.B. mounted, 0.5" (12.7mm) lead length with 2.5 x 2.5" (63.5 x 63.5mm) copper pad

Zowie Technology Corporation

REV. 0

中文翻译

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与1N5820H相关器件

型号	品牌	获取价格	描述	数据表
1N5820H31	RECTRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD,
1N5820H31-1	RECTRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD,
1N5820H32	RECTRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD,
1N5820H32-1	RECTRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD,
1N5820H33	RECTRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD,
1N5820H34	RECTRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD,
1N5820H35	RECTRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD,
1N5820H36	RECTRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD,
1N5820H36-1	RECTRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD,
1N5820H36-2	RECTRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD,

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