1N5820GP

更新时间： 2024-01-05 08:05:17

品牌	Logo	应用领域
力勤 - CHENMKO		/
页数	文件大小	规格书
2页	74K
描述
Rectifier Diode,

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中文翻译

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技术参数
数据手册

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1N5820GP 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	5.59	Is Samacsys：	N
其他特性：	METALLURGICALLY BONDED	应用：	GENERAL PURPOSE
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	RECTIFIER DIODE
JESD-30 代码：	O-LELF-R2	JESD-609代码：	e0
元件数量：	1	相数：	1
端子数量：	2	最大输出电流：	3 A
封装主体材料：	GLASS	封装形状：	ROUND
封装形式：	LONG FORM	认证状态：	Not Qualified
表面贴装：	YES	技术：	SCHOTTKY
端子面层：	TIN LEAD	端子形式：	WRAP AROUND
端子位置：	END	Base Number Matches：	1

1N5820GP 数据手册

1N5820PT

THRU

CHENMKO ENTERPRISE CO.,LTD

SCHOTTKY BARRIER RECTIFIER

1N5822PT

VOLTAGE RANGE 20 - 40 Volts CURRENT 3.0 Amperes

FEATURES

* Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

* Low switching noise

* Low forward voltage drop

* High current capability

* High switching capability

DO-201AD

* High reliability

* High surge capability

* High temperature soldering guaranteed :

260^oC/10 seconds , 0.375" (9.5mm) lead length,

5lbs. (2.3kg) tension

0.052(1.3)

DIA.

0.048(1.2)

1.0(25.4)

MIN.

MECHANICAL DATA

Case: JEDEC DO-201AD molded plastic body

Terminals: Plated axial leads, solderable per MIL-STD-750,

Method 2026

0.375(9.5)

0.335(8.5)

0.220(5.6)

0.197(5.0)

Polarity: Color band denotes cathode end

Mounting Position: Any

DIA.

Weight: 1.18 grams

1.0(25.4)

MIN.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25^oC ambient temperature unless otherwise specified.

Single phase, half wave, 60 HZ, resistive or inductive load.

For capacitive load, derate current by 20%.

Dimensions in inches and (millimeters)

DO-201AD

MAXIMUM RATINGES ( At TA = 25^oC unless otherwise noted )

RATINGS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

SYMBOL

VRRM

1N5820PT

1N5821PT

1N5822PT

UNITS

Volts

VRMS

Maximum DC Blocking Voltage

VDC

Maximum Average Forward Rectified Current

0.375" (9.5mm) lead length at TL = 95^oC

3.0

Amps

Peak Forward Surge Current 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

IFSM

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance (Note 2)

Storage and Operating Temperature Range

250

^oC / W

^oC

TJ, TSTG

-65 to +125

ELECTRICAL CHARACTERISTICS ( At TA = 25^oC unless otherwise noted )

CHARACTERISTICS

SYMBOL

UNITS

Volts

1N5820PT

0.475

1N5821PT

0.500

1N5822PT

0.525

Maximum Instantaneous Forward Voltage at 3.0 A DC

Maximum Instantaneous Forward Voltage at 9.4 A DC

0.850

0.900

0.950

Volts

Maximum Average Reverse Current

at Rated DC Blocking Voltage (Note 3)

@ TA = 25^oC

@ TA = 100^oC

2.0

mAmps

2001-6

NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 4.0 volts

2. Thermal Resistance ( Junction to Ambient ) : Vertical PC Board Mounting, 0.5" (12.7mm) Lead Length.

3. Measured at Pulse Width 300 us, Duty Cycle 2%.

中文翻译

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与1N5820GP相关器件

型号	品牌	获取价格	描述	数据表
1N5820-GT3	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD, PLASTIC
1N5820H	PANJIT	获取价格	SCHOTTKY BARRIER RECTIFIERS
1N5820H	ZOWIE	获取价格	SCHOTTKY BARRIER RECTIFIER
1N5820H31	RECTRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD,
1N5820H31-1	RECTRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD,
1N5820H32	RECTRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD,
1N5820H32-1	RECTRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD,
1N5820H33	RECTRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD,
1N5820H34	RECTRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD,
1N5820H35	RECTRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD,

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