Datasheet > 1N5820_15

1N5820_15

更新时间： 2024-09-25 01:25:47

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	69K
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Vishay General Semiconductor

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数据手册

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1N5820_15 数据手册

1N5820, 1N5821, 1N5822

Vishay General Semiconductor

www.vishay.com

Schottky Barrier Plastic Rectifier

FEATURES

• Guardring for overvoltage protection

• Very small conduction losses

• Extremely fast switching

• Low forward voltage drop

• High forward surge capability

• High frequency operation

• Solder dip 275 °C max. 10 s, per JESD 22-B106

DO-201AD

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

PRIMARY CHARACTERISTICS

For use in low voltage high frequency inverters,

freewheeling, DC/DC converters, and polarity protection

applications.

I_F(AV)

3.0 A

V_RRM

I_FSM

20 V, 30 V, 40 V

80 A

MECHANICAL DATA

V_F

0.475 V, 0.500 V, 0.525 V

125 °C

Case: DO-201AD

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

T_Jmax.

Package

Diode variations

DO-201AD

Single

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

Polarity: Color band denotes the cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

1N5820

1N5821

1N5822

UNIT

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

Maximum DC blocking voltage

Non-repetitive peak reverse voltage

V_RSM

Maximum average forward rectified current

at 0.375" (9.5 mm) lead length at T_L= 95 °C

I_F(AV)

3.0

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

Operating junction and storage temperature range

T_J, T_STG

- 65 to + 125

°C

ELECTRICAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS SYMBOL

1N5820

1N5821

0.500

0.900

2.0

1N5822

0.525

UNIT

(1)

Maximum instantaneous forward voltage

3.0

V_F

0.475

(1)

9.4

0.850

0.950

T_A= 25 °C

T_A= 100 °C

Maximum average reverse current

at rated DC blocking voltage

I_R

Note

(1)

Pulse test: 300 μs pulse width, 1 % duty cycle

Revision: 13-Aug-13

Document Number: 88526

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4

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与1N5820_15相关器件

型号	品牌	获取价格	描述	数据表
1N5820_V01	MDD	获取价格	SCHOTTKY BARRIER RECTIFIER
1N5820-13	DIODES	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD
1N5820-3A-DO-27	DGNJDZ	获取价格	3.0 AMP SCHOTTKY BARRIER RECTIFIERS
1N5820-AP	MCC	获取价格	3 Amp Schottky Barrier Rectifier 20 - 40 Volts
1N5820-AP-HF	MCC	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD,
1N5820-B	DIODES	获取价格	3.0A SCHOTTKY BARRIER RECTIFIERS
1N5820-B	RECTRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD, ROHS COM
1N5820BK	CENTRAL	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD,
1N5820BKLEADFREE	CENTRAL	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD,
1N5820-BP	MCC	获取价格	3 Amp Schottky Barrier Rectifier 20 - 40 Volts

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