5秒后页面跳转
1N5820_12 PDF预览

1N5820_12

更新时间: 2024-01-23 04:32:05
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 119K
描述
Schottky Rectifier, 3.0 A

1N5820_12 数据手册

 浏览型号1N5820_12的Datasheet PDF文件第2页浏览型号1N5820_12的Datasheet PDF文件第3页浏览型号1N5820_12的Datasheet PDF文件第4页浏览型号1N5820_12的Datasheet PDF文件第5页浏览型号1N5820_12的Datasheet PDF文件第6页 
VS-1N5820, VS-1N5820-M3  
www.vishay.com  
Vishay Semiconductors  
Schottky Rectifier, 3.0 A  
FEATURES  
• Low profile, axial leaded outline  
• High frequency operation  
• Very low forward voltage drop  
Cathode  
Anode  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
C-16  
• Guard ring for enhanced ruggedness and long  
term reliability  
• Compliant to RoHS Directive 2002/95/EC  
• Designed and qualified for commercial level  
PRODUCT SUMMARY  
Package  
DO-201AD (C-16)  
3 A  
• Halogen-free according to IEC 61249-2-21 definition  
(-M3 only)  
IF(AV)  
VR  
20 V  
VF at IF  
See Electrical table  
20 mA at 100 °C  
150 °C  
DESCRIPTION  
I
RM max.  
The VS-1N5820... axial leaded Schottky rectifier has been  
optimized for very low forward voltage drop, with moderate  
leakage. Typical applications are in switching power  
supplies, converters, freewheeling diodes, and reverse  
battery protection.  
TJ max.  
Diode variation  
EAS  
Single die  
See Electrical table  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
3.0  
UNITS  
Rectangular waveform  
A
V
20  
tp = 5 μs sine  
3 Apk, TJ = 25 °C  
Range  
450  
A
VF  
0.475  
- 65 to 150  
V
TJ  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VS-1N5820  
VS-1N5820-M3  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
VR  
20  
20  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
50 % duty cycle at TL = 114 °C, rectangular waveform  
With cooling fins  
Maximum average forward current  
IF(AV)  
3.0  
A
5 µs sine or 3 µs rect. pulse  
10 ms sine or 6 ms rect. pulse  
450  
90  
Followinganyratedload  
condition and with rated  
Maximum peak one cycle  
non-repetitive surge current at TJ = 25 °C  
IFSM  
VRRM applied  
Revision: 11-Oct-11  
Document Number: 93257  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与1N5820_12相关器件

型号 品牌 获取价格 描述 数据表
1N5820_13 VISHAY

获取价格

Schottky Barrier Rectifier
1N5820_15 GOOD-ARK

获取价格

Schottky Barrier Rectifiers Reverse Voltage 20 to 40 Volts Forward Current 3.0 Amperes
1N5820_15 LRC

获取价格

Schottky Barrier Rectifiers
1N5820_15 VISHAY

获取价格

Vishay General Semiconductor
1N5820_V01 MDD

获取价格

SCHOTTKY BARRIER RECTIFIER
1N5820-13 DIODES

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD
1N5820-3A-DO-27 DGNJDZ

获取价格

3.0 AMP SCHOTTKY BARRIER RECTIFIERS
1N5820-AP MCC

获取价格

3 Amp Schottky Barrier Rectifier 20 - 40 Volts
1N5820-AP-HF MCC

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD,
1N5820-B DIODES

获取价格

3.0A SCHOTTKY BARRIER RECTIFIERS