Datasheet > 1N5820_11

1N5820_11

更新时间： 2024-01-19 05:09:32

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
4页	453K
描述
3 Amp Schottky Barrier Rectifier 20 - 40 Volts

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中文翻译

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数据手册

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1N5820_11 数据手册

M C C

1N5820

THRU

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20736 Marilla Street Chatsworth

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Micro Commercial Components

1N5822

Features

•

Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates

RoHS Compliant. See ordering information)

Low Forward Voltage Drop and High Current Capability

High Surge Current Capability

Epoxy meets UL 94 V-0 flammability rating

Moisture Sensitivity Level 1

3 Amp Schottky

Barrier Rectifier

20 - 40 Volts

Maximum Ratings

DO-201AD

Operating Temperature: -55°C to +125°C

Storage Temperature: -55°C to +125°C

Maximum Thermal Resistance; 28°C/W Junction To Ambient

MCC

Catalog

Number

Device

Marking

Maximum

Recurrent

Peak

Reverse

Voltage

20V

Maximum Maximum

RMS

Voltage

Blocking

Voltage

1N5820

1N5821

1N5822

14V

21V

28V

20V

30V

40V

1N5820

1N5821

1N5822

30V

40V

Cathode

Mark

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

Current

I_F(AV)

3.0A

T_A= 85°C

Peak Forward Surge

Current

I_FSM

80A

8.3ms, half sine

Maximum

Instantaneous

Forward Voltage

1N5820

1N5821

1N5822

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

V_F

.475V

.500V

.525V

I_FM= 3.0A;

T_J= 25°C(Note 2)

DIMENSIONS

INCHES

MIN

.287

.189

.048

MIN

DIM

MAX

.374

.208

.052

---

MAX

9.50

5.30

1.30

---

NOTE

7.30

4.80

I_R

0.5mA

20mA

T_J= 25°C

T_J= 100°C

1.20

25.40

1.000

Typical Junction

Capacitance

C_J

200pF

Measured at

1.0MHz, V_R=4.0V

Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.

2.Pulse test: Pulse width 300 msec, Duty cycle 1%

www.mccsemi.com

Revision: A

2011/01/01

1 of 4

12 3 4

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