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1N5820-B PDF预览

1N5820-B

更新时间： 2024-09-24 20:24:47
品牌 Logo 应用领域
RECTRON 功效瞄准线二极管
页数 文件大小 规格书
2页 24K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2

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1N5820-B 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：DO-201AD
包装说明：ROHS COMPLIANT, PLASTIC PACKAGE-2针数：2
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.59
其他特性：HIGH RELIABILITY, LOW NOISE应用：GENERAL PURPOSE
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JEDEC-95代码：DO-201ADJESD-30 代码：O-PALF-W2
JESD-609代码：e3最大非重复峰值正向电流：80 A
元件数量：1相数：1
端子数量：2最高工作温度：150 °C
最大输出电流：3 A封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：265认证状态：Not Qualified
最大重复峰值反向电压：20 V表面贴装：NO
技术：SCHOTTKY端子面层：Matte Tin (Sn)
端子形式：WIRE端子位置：AXIAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

1N5820-B 数据手册

 浏览型号1N5820-B的Datasheet PDF文件第2页 
1N5820  
THRU  
RECTRON  
SEMICONDUCTOR  
TECHNICAL SPECIFICATION  
1N5822  
SCHOTTKY BARRIER RECTIFIER  
VOLTAGE RANGE 20 to 40 Volts CURRENT 3.0 Amperes  
FEATURES  
* Low switching noise  
* Low forward voltage drop  
* High current capability  
* High switching capabitity  
* High surge capability  
* High reliability  
DO-201AD  
MECHANICAL DATA  
* Case: Molded plastic  
(
)
.052 1.3  
* Epoxy: Device has UL flammability classification 94V-O  
* Lead: MIL-STD-202E method 208C guaranteed  
* Mounting position: Any  
DIA.  
(
)
.048 1.2  
1.0 (25.4)  
MIN.  
* Weight: 1.18 grams  
.375 (9.5)  
.335 (8.5)  
(
)
.220 5.6  
DIA.  
(
)
.197 5.0  
1.0 (25.4)  
MIN.  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS (At T  
A
= 25oC unless otherwise noted)  
RATINGS  
SYMBOL  
1N5820  
20  
1N5821  
30  
1N5822  
40  
UNITS  
Volts  
V
V
RRM  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
RMS  
14  
20  
21  
30  
28  
40  
Volts  
Volts  
V
DC  
O
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified Current  
.375” (9.5mm) lead length at TL  
= 95oC  
I
3.0  
80  
Amps  
Peak Forward Surge Current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
I
FSM  
Amps  
Typical Thermal Resistance (Note 2)  
Typical Junction Capacitance (Note 3)  
Storage and Operating Temperature Range  
R θ J A  
28  
250  
0C/W  
pF  
0 C  
CJ  
T
J
, TSTG  
-55 to + 150  
ELECTRICAL CHARACTERISTICS (At TA  
= 25oC unless otherwise noted)  
CHARACTERISTICS  
SYMBOL  
1N5820  
.475  
1N5821  
.500  
1N5822  
.525  
UNITS  
Volts  
Maximum Instantaneous Forward Voltage at 3.0A DC (Note 1)  
Maximum Instantaneous Forward Voltage at 9.4A DC (Note 1)  
V
V
F
F
.850  
.900  
.950  
Volts  
2.0  
Maximum Average Reverse Current at  
Rated DC Blocking Voltage (Note 1)  
@T  
@T  
A
A
= 25oC  
= 100oC  
mAmps  
I
R
20  
NOTES : 1. Measured at Pulse Width 300 uS, Duty 2%.  
2002-11  
2. Thermal Resistance (Junction to Ambient): Vertical PC Board Mounting, 0.5” (12.7mm) Lead Length.  
3. Measured at 1 MHz and applied reverse voltage of 4.0 volts.  
12

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