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1N5819-TP PDF预览

1N5819-TP

更新时间: 2024-10-30 13:03:39
品牌 Logo 应用领域
美微科 - MCC 二极管
页数 文件大小 规格书
2页 84K
描述
Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2

1N5819-TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-41
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:0.52
其他特性:LOW POWER LOSS外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.6 V
JEDEC-95代码:DO-41JESD-30 代码:O-PALF-W2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:25 A元件数量:1
端子数量:2最高工作温度:125 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:40 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子面层:MATTE TIN端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N5819-TP 数据手册

 浏览型号1N5819-TP的Datasheet PDF文件第2页 
M C C  
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21201 Itasca Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
1N5817  
THRU  
1N5819  
Features  
·
·
·
·
·
Schottky Barrier Rectifier  
Guard Ring Protection  
Low Forward Voltage  
1 Amp Schottky  
Barrier Rectifier  
20 to 40 Volts  
Low Power Loss For High Efficiency  
High Current Capability  
Maximum Ratings  
DO-41  
·
·
·
Operating Temperature: -55°C to +125°C  
Storage Temperature: -55°C to +150°C  
Maximum Thermal Resistance; 80°C/W Junction To Ambient  
Maximum  
Recurrent  
Peak Reverse  
Voltage  
Maximum DC  
Blocking  
Voltage  
MCC  
Part Number  
Maximum  
RMS Voltage  
D
1N5817  
1N5818  
1N5819  
20V  
30V  
40V  
14V  
21V  
28V  
20V  
30V  
40V  
A
Cathode  
Mark  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
B
Average Forward  
Current  
IF(AV)  
1.0A  
TA = 90°C  
D
Peak Forward Surge  
Current  
IFSM  
25A  
8.3ms, half sine  
Maximum  
Instantaneous  
Forward Voltage  
1N5817  
C
VF  
.45V  
.55V  
.60V  
IFM = 1.0A;  
TJ = 25°C*  
1N5818  
1N5819  
DIMENSIONS  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
Typical Junction  
Capacitance  
INCHES  
MAX  
MM  
DIM  
A
MIN  
.166  
.080  
.028  
1.000  
MIN  
4.10  
2.00  
.70  
MAX  
5.20  
2.70  
.90  
NOTE  
IR  
0.5mA TJ = 25°C  
10mA TJ = 100°C  
.205  
.107  
.034  
---  
B
C
D
25.40  
---  
Cj  
110pF Measured at  
1.0MHz, VR=4.0V  
*Pulse test: Pulse width 300 msec, Duty cycle 2%  
www.mccsemi.com  

1N5819-TP 替代型号

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VS-1N5819 VISHAY

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