Datasheet > 1N5818WV-W

1N5818WV-W

更新时间： 2024-09-15 19:38:15

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
5页	78K
描述
Rectifier Diode,

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中文翻译

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技术参数
数据手册

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1N5818WV-W 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.6	Base Number Matches：	1

1N5818WV-W 数据手册

1N5817W

THRU

1N5819W

SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere

FEATURES

* Metal silicon junction, majority carrier conduction

* Guarding for overvoltage protection

* High current capability

SOD-123F

* Low power loss, high efficiency

* High surge capability

* For use in low voltage, high frequency inverters,free wheeling, and polarity

protection applications

* P/N suffix V means AEC-Q101 qualified, eg:1N5817WV

* P/N suffix V means Halogen-free

.114 (2.9)

.106 (2.7)

.077 (1.95)

.069 (1.75)

.035 (0.90)

.028 (0.70)

.008 (0.20)

.053 (1.35)

.047 (1.20)

.030 (0.75)

.022 (0.55)

.150 (3.8)

.142 (3.6)

Maximum Ratings and Electrical characteristics

Ratings at 25 qC ambient temperature unless otherwise specified.

Dimensions in inches and (millimeters)

Symbols

V_RRM

Parameter

Maximum Repetitive Peak Reverse Voltage

Maximum RMS voltage

1N5817W 1N5818W 1N5819W

Units

V_RMS

Maximum DC Blocking Voltage

V_DC

Maximum Average Forward Rectified Current

0.375" (9.5 mm) Lead Length at T^L= 90qC

I_F(AV)

Peak Forward Surge Current, 8.3ms Single Half Sine-wave

Superimposed On Rated Load (JEDEC method) at TL = 70qC

I_FSM

I²T

V_F

I_R

Typical Current Squared Time

2.59

A S

Maximum Instantaneous Forward Voltage at 1 A

Maximum Instantaneous Forward Voltage at 3.1 A

0.45

0.75

0.55

0.875

0.6

0.9

Maximum Instantaneous Reverse Current at TA = 25qC

Rated DC Reverse Voltage

TA = 150qC

R_˥JA

R_˥JL

Typical Thermal Resistance

¶C/W

Typical Junction Capacitance

C_j

110

Storage and Operating Junction Temperature Range

T_j, T_stg

-55 ~ +125

¶C

2018-04

REV˖A

12 3 4 5

中文翻译

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与1N5818WV-W相关器件

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