Datasheet > 1N5818WSB

1N5818WSB

更新时间： 2024-10-15 18:05:03

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	249K
描述
Schottky Diodes

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1N5818WSB 数据手册

SMD Type

Diodes

Transistors

Schottky Diodes

1N5817WSB-1N5819WSB

SOD-323

Ƶ Features

ƽ Low Positive Pressure Drop.

ƽ Can Ignore the Reverse Recovery Time.

Top View

PIN DESCRIPTION

DESCRIPTION

Cathode

Anode

Ƶ Absolute Maximum Ratings Ta = 25ć

Rating

1N5819WSB 1N5818WSB 1N5817WSB

Unit

Parameter

Symbol

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Reverse Voltage

RRM

RWM

RMS Reverse Voltage

R(RMS)

FSM

350

Non-Repetitive Peak Forward Current

Non-Repetitive Peak Forward Surge Current

Power Dissipation

1.5

200

ć/W

625

Thermal Resistance Junction to Ambient

Junction Temperature

R©JA

125

-55 to 125

Storage Temperature range

Tstg

Ƶ Electrical Characteristics Ta = 25ć

Test Conditions

Parameter

Symbol

Min

Typ

Max

Unit

= 10 uA

= 20 mA

= 200 mA

Reverse breakdown voltage

0.37

0.6

Forward voltage Drop

VFM

= 30 V

1N5819WSB

Instantaneous Reverse current

= 20 V

1N5818WSB

1N5817WSB

=10 V

= 0 V, f= 1 MHz

Total capacitance

IF=IR=200mA,Irr=0.1xIR, RL=100ȍ

Reverse recovery time

trr

Ƶ Marking

Model

1N5819WSB

1N5818WSB 1N5817WSB

S5 S6

Marking

www.kexin.com.cn

12 3

中文翻译

下载PDF

与1N5818WSB相关器件

型号	品牌	获取价格	描述	数据表
1N5818WV	RECTRON	获取价格	Reverse Voltage Vr : 30 V;Forward Current Io : 1.0 A;Max Surge Current : 25 A;Forward Volt
1N5818WV-W	RECTRON	获取价格	Rectifier Diode,
1N5818W-W	RECTRON	获取价格	Rectifier Diode,
1N5818X	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, Silicon, GLASS PACKAGE-2
1N5819	COMCHIP	获取价格	Schottky Barrier Rectifier
1N5819	SEMIKRON	获取价格	Schottky barrier rectifiers diodes
1N5819	WTE	获取价格	1.0A SCHOTTKY BARRIER RECTIFIER
1N5819	MICROSEMI	获取价格	1 Amp Schottky Rectifier
1N5819	FUJI	获取价格	1 AMP SCHOTTKY BARRIER RECTIFIER
1N5819	DIODES	获取价格	1.0A SCHOTTKY BARRIER RECTIFIER