Datasheet > 1N5818WB

1N5818WB

更新时间： 2024-09-13 07:22:43

品牌	Logo	应用领域
EIC		二极管
页数	文件大小	规格书
1页	43K
描述
SCHOTTKY BARRIER DIODES

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中文翻译

获取价格

技术参数
数据手册

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1N5818WB 技术参数

是否无铅：	不含铅	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.84

1N5818WB 数据手册

Certificate TH97/10561QM

Certificate TW00/17276EM

SCHOTTKY BARRIER DIODES

1N5817WB - 1N5819WB

SOD-123

2.7

2.6

PRV : 20 - 40 Volts

IO : 1.0 Ampere

MECHANICAL DATA :

* Case : SOD-123

* Weight : 0.01 gram (approximately)

* 1N5817WB Marking Code : A0

* 1N5818WB Marking Code : ME

* 1N5819WB Marking Code : SR

3.9

3.7

Dimensions in millimeters

Absolute Maximum Rating (Ta = 25 °C)

Parameter

Symbol

Value

Unit

DC Reverse Voltage

1N5817WB

V_R

1N5818WB

1N5819WB

I_O

P_tot

T_J

Average Rectified Output Current

Power Dissipation

1.0

°C

450

Operating Junction Temperature Range

Storage Temperature Range

-55 to + 150

T_STG

°C

Electrical Characteristics (Ta = 25 °C )

Min

Typ

Max

Unit

Parameter

Symbol

Reverse Breakdown Voltage

at I_R= 1 mA

1N5817WB

1N5818WB

1N5819WB

1N5817WB

1N5818WB

1N5819WB

1N5817WB

1N5818WB

1N5819WB

1N5817WB

1N5818WB

1N5819WB

V_BR

at V_R= 20 V

Reverse Leakage Current

at V_R= 30 V

at V_R= 40 V

at V_R= 4 V

at V_R= 6 V

at I_F= 0.1 A

at I_F= 1.0 A

I_R

0.050

0.075

0.45

0.55

0.60

0.750

0.875

0.900

120

Forward Voltage

V_F

at I_F= 3.0 A

Diode Capacitance at V_R= 4 V, f = 1MHz

C_D

Page 1 of 1

Rev. 01 : August 22, 2006

中文翻译

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