Datasheet > 1N5818WB

1N5818WB

更新时间： 2024-09-13 06:18:47

品牌	Logo	应用领域
商升特 - SEMTECH		肖特基二极管
页数	文件大小	规格书
2页	136K
描述
1 A SURFACE MOUNT SCHOTTKY BARRIER DIODE

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中文翻译

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数据手册

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1N5818WB 数据手册

1N5817WB-1N5819WB

1 A SURFACE MOUNT SCHOTTKY BARRIER DIODE

PINNING

DESCRIPTION

Cathode

Anode

Top View

Marking Code: 1N5817WB: A0

1N5818WB: ME

1N5819WB: SR

Simplified outline SOD-123 and symbol

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

V_R

Value

Unit

1N5817WB

Reverse Voltage

1N5818WB

1N5819WB

I_O

Average Forward Rectified Current

Non-Repetitive Peak Forward Surge Current

(8.3 ms Single Half Sine-Wave)

I_FSM

Power Dissipation

P_tot

T_j

450

Operating Temperature Range

Storage Temperature Range

- 55 to + 150

T_S

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

Max.

Unit

Reverse Breakdown Voltage

at I_R= 1 mA

1N5817WB

1N5818WB

1N5819WB

V_BR

Reverse Voltage Leakage Current

at V_R= 20 V

at V_R= 30 V

at V_R= 40 V

at V_R= 4 V

1N5817WB

1N5818WB

1N5819WB

I_R

0.05

0.075

at V_R= 6 V

Forward Voltage

at I_F= 0.1 A

1N5819WB

0.45

at I_F= 1 A

1N5817WB

1N5818WB

1N5819WB

0.45

0.55

0.6

V_F

at I_F= 3 A

1N5817WB

1N5818WB

1N5819WB

0.75

0.875

0.9

Diode Capacitance

at V_R= 4 V, f = 1 MHz

C_D

120

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 20/12/2006

中文翻译

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