Datasheet > 1N5818W

1N5818W

更新时间： 2024-11-17 02:57:43

品牌	Logo	应用领域
商升特 - SEMTECH		二极管
页数	文件大小	规格书
3页	242K
描述
SCHOTTKY BARRIER RECTIFIERS

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数据手册

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1N5818W 数据手册

1N5817W

1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features:

PINNING

DESCRIPTION

Cathode

․ Schottky Barrier Chip

․ Guard Ring Die Construction for Transient Protection

․ Low Power Loss, High Efficiency

․ High Surge Capability

Anode

․ High Current Capability and Low Forward Voltage Drop

․ For Use in Low Voltage, High Frequency Inverters, Free

Top View

Marking Code: "A0"

Wheeling, and Polarity Protection Application.

Simplified outline SOD-123 and symbol

Mechanical Data:

Case: SOD-123, Plastic

Terminals: Solderable per MIL-STD-202, Method 208

Polarity: Cathode Band

Absolute Maximum Ratings (T_a= 25^oC)

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage at I_R=1.0mA

DC Blocking Voltage

V_RRM

V_RWM

V_R

1.0

RMS Reverse Voltage

V_R(RMS)

I_O

Average Rectified Output Current at T_L=90℃

Power Dissipation

P_tot

450

Non-Repetitive Peak Forward Surge Current 8.3ms single half

sine-wave superimposed on rated load (JEDEC Method)

I_FSM

Typical Thermal Resistance Junction to Ambient

Operating Temperature Range

R_θJA

T_j

222

℃/W

℃

-65 to +125

-65 to +150

Storage Temperature Range

T_S

℃

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 24/11/2004

12 3

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