Datasheet > 1N5818SF

1N5818SF

更新时间： 2024-10-30 12:51:51

品牌	Logo	应用领域
星合电子 - GXELECTRONICS		/
页数	文件大小	规格书
2页	338K
描述
SCHOTTKY BARRIER RECTIFIER Reverse Voltage 20 to 40 Volts Forward Current - 1.0Ampere

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数据手册

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1N5818SF 数据手册

1N5817SF THRU 1N5819SF

星合子

XINGHE ELECTRONICS

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage 20 to 40 Volts

Forward Current - 1.0Ampere

FEATURES

SOD-123FL

Plastic package has Underwriters Laboratory Flammability Classification 94V-0

Metal silicon junction ,majority carrier conduction

Guard ring for overvoltage protection

0.040(1.00 )

0.020(0.50)

0.077(1.95 )

0.054(1.38)

Low power loss ,high efficiency

High current capability ,Low forward voltage drop

High surge capability

0.114(2.90 )

0.098(2.50)

For use in low voltage ,high frequency inverters,

free wheeling ,and polarity protection applications

High temperature soldering guaranteed:260 C/10 seconds at terminals,

0.375"(9.5mm)lead length,5lbs.(2.3kg)tension

0.154(3.90)

0.138(3.50)

⁵°

0.010(0.25)

MAX

0.052(1.33)

0.031(0.8)

MECHANICAL DATA

0.010(0.25)

MIN

Case: SOD-123FL molded plastic body

Lead Finish: 100% Matte Sn (Tin)

Polarity: color band denotes cathode end

Mounting Position: Any

Dimensions in inches and (millimeters)

Weight: 11.7 mg(approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(Ratings at 25 C ambient temperature unless otherwise specified ,Single phase ,half wave ,resistive or inductive

load. For capacitive load,derate by 20%.)

1N5817SF

Symbols

1N5818SF

1N5819SF

Units

Maximum repetitive peak reverse voltage

Maximum RMS voltage

VRRM

VRMS

VDC

Volts

Maximum DC blocking voltage

Maximum non-repetitive peak reverse voltage

VRSM

Volts

Amp

Maximum average forward rectified current

1.0

I(AV)

IFSM

Peak forward surge current 8.3ms single half

sine-wave superimposed on rated load

25.0

Amps

(JEDEC method) at TL=70 C

0.450

0.750

Maximum instantaneous forward voltage at 1.0 A(note 1 )

Maximum instantaneous forward voltage at 3.1 A(note 1 )

Maximum instantaneous reverse

0.550

0.875

0.600

0.900

Volts

0.2

10.0

T _A=25 C

current at rated DC blocking

voltage(Note 1)

T_A=100 C

110.0

Typical junction capacitance(Note 3)

82.0

26.0

Typical thermal resistance(Note 2)

C/W

Operating junction and storage temperature range

-65 to +150

TJTSTG

Notes: 1.Pulse test: 300 s pulse width,1% duty cycle

2.Thermal resistance (from junction to ambient)Vertical P.C.B. mounted with 1 in. copper pad (Cu area 700 mm2).

3.Measured at 1.0MHz and reverse voltage of 4.0 volts

GAOMI XINGHE ELECTRONICSCO.,LTD.

WWW.SDDZG.COM

TEL:0536-2210359

QQ:464768017

中文翻译

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与1N5818SF相关器件

型号	品牌	获取价格	描述	数据表
1N5818-T	WTE	获取价格	1.0A SCHOTTKY BARRIER RECTIFIER
1N5818-T	RECTRON	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PALS
1N5818-T/B	FRONTIER	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, Silicon
1N5818T/R	PHILIPS	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM),
1N5818-T/R	FRONTIER	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, Silicon
1N5818T26R	FAIRCHILD	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-41
1N5818-T3	WTE	获取价格	1.0A SCHOTTKY BARRIER RECTIFIER
1N5818-T3-LF	WTE	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLAS
1N5818T50A	FAIRCHILD	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-41, D4, 2 PIN
1N5818T50R	FAIRCHILD	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-41, D4, 2 PIN

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