Datasheet > 1N5818-T3-LF

1N5818-T3-LF

更新时间： 2024-09-13 20:08:19

品牌	Logo	应用领域
WTE		瞄准线二极管
页数	文件大小	规格书
4页	45K
描述
Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2

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中文翻译

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1N5818-T3-LF 数据手册

WTE

POWER SEMICONDUCTORS

1N5817 – 1N5819

1.0A SCHOTTKY BARRIER DIODE

Features

Schottky Barrier Chip

Guard Ring Die Construction for

Transient Protection

High Current Capability

Low Power Loss, High Efficiency

High Surge Current Capability

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity

Protection Applications

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ D

Mechanical Data

DO-41

Dim

Min

25.4

4.06

0.71

2.00

Max

Case: DO-41, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

Weight: 0.34 grams (approx.)

Mounting Position: Any

Marking: Type Number

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

—

5.21

0.864

2.72

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Symbol

1N5817

1N5818

1N5819

Unit

V^RRM

V^RWM

V^R

RMS Reverse Voltage

V^R(RMS)

I^O

Average Rectified Output Current (Note 1) @T_L= 90°C

1.0

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load

(JEDEC Method)

I^FSM

Forward Voltage

@I_F= 1.0A

@I_F= 3.0A

0.450

0.750

0.550

0.875

0.60

0.90

V^FM

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

1.0

I^RM

Typical Junction Capacitance (Note 2)

C^j

110

°C/W

°C

Typical Thermal Resistance Junction to Lead (Note 1)

Operating and Storage Temperature Range

R^ꢀ^JL

T^j, T^STG

-65 to +150

Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

1N5817 – 1N5819

1 of 4

12 3 4

中文翻译

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与1N5818-T3-LF相关器件

型号	品牌	获取价格	描述	数据表
1N5818T50A	FAIRCHILD	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-41, D4, 2 PIN
1N5818T50R	FAIRCHILD	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-41, D4, 2 PIN
1N5818-TB	WTE	获取价格	1.0A SCHOTTKY BARRIER RECTIFIER
1N5818T-G	COMCHIP	获取价格	Schottky Barrier Rectifiers
1N5818-TP	MCC	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLAS
1N5818-TP-HF	MCC	获取价格	暂无描述
1N5818TR	VISHAY	获取价格	Schottky Rectifier, 1.0 A
1N5818TR	INFINEON	获取价格	SCHOTTKY RECTIFIER 1.0 Amp
1N5818TRPBF	INFINEON	获取价格	暂无描述
1N5818TR-RPCU	CENTRAL	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-41, DO-41SP, 2 PIN

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